GaN技术杂谈

骆乾，“三代半食堂”创始人

PCIM Asia 2026 上，EPC 展示了面向 AI 处理器供电的 Gen 8 单片 GaN 功率级。

作为 EPC 面向下一代 AI 处理器侧高频多相 POL / IVR 场景开发的单片集成功率级，Gen 8 在同一 GaN 芯片上集成半桥功率开关、高速栅极驱动、自举电路（bootstrap）、电平移位与逻辑控制，并通过更低电荷、更高开关速度和更强过压承受能力面向 6 V 输入与 10 MHz 级运行。其系统意义不只是减少器件数量，而是缩小驱动回路寄生、降低噪声敏感性，并让控制侧采用更适合大量数字功能的高速工艺，从而支持更高相数和更紧凑的处理器侧布局。

Modern data centers’ power requirements are changing dramatically due to the rapid growth of AI workloads. As GPU platforms such as NVIDIA’s Vera Rubin push rack power from 200 kW toward the 1-MW level, traditional 48-V busbar power distribution becomes physically and economically impractical because of massive conduction losses. Current can exceed 4,000 A in the 48-V busbar before reaching the server boards.

To address these increasing current levels, the industry is transitioning to an 800-Vdc power distribution architecture. This approach enables high-voltage dc to be delivered directly to server boards, significantly increasing power capacity while reducing copper requirements and improving overall efficiency. One of the major challenges in the new 800-V ecosystem is the efficient conversion of high-voltage dc to the intermediate bus voltages of 12.5 V or 6 V required by POL voltage regulators powering AI processors, without needing an additional 800-V to 48-V conversion stage. Traditional single-stage topologies with such high stepdown ratios result in transformer complexity and limited efficiency.

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GaN FET 与任何其他类型的晶体管一样，在开关过程中会耗散 功率 ，并以热量的形式表现出来。如果超过特定的温度限制，可能会损坏这些器件。因此，热管理是转换器设计中的重要环节。

作者：Maurizio Di Paolo Emilio，《Data Centre Digest》特约编辑

氮化镓（GaN）正在进入一个新的发展阶段。在激光雷达、卫星电源、快速充电器和AI电源供电等应用中确立了自身地位之后，这项技术正越来越多地迈向低电压、大电流应用领域，而在这些应用中，开关速度、低导通损耗和功率密度至关重要。

Encouraging developers to design high-performance Class-D audio amplifiers leveraging GaN FETs, Efficient Power Conversion (EPC) has launched the new EPC9192 reference design, enabling high power and high efficiency Class-D audio amplifiers in a modular design. audioXpress reviews the EPC9192 to confirm the performance capabilities of EPC’s 200V, EPC2307 eGaN FETs in a ground-referenced, split dual supply single-ended (SE) design, rated to deliver 700W per channel into a 4Ω load.

Qian Luo, Author, WBG TechnoBite

In humanoid robot wrists and dexterous hands, as well as compact drone propulsion systems, motor drives are moving from external controller boards into the actuator itself. At that point, the inverter is no longer an independent unit that simply delivers three-phase current to the motor; it must share a tightly constrained space with the motor, position sensor, mechanical structure, and thermal path.

This changes the design priorities for compact motor drives. Continuous current and torque capability certainly depend on the power devices, but where the DC-link capacitors can be placed, whether heat can be transferred into the housing or airflow, and how sensing and protection signals are routed all shape the final system performance.

As AI infrastructure, humanoid robots, drones, autonomous machines and space systems push power electronics toward higher efficiency and power density, gallium nitride (GaN) is moving into increasingly demanding applications. At PCIM Asia 2026 in Shenzhen, Efficient Power Conversion (EPC) will showcase its latest GaN technology while offering a preview of where the company believes the technology is heading next. The event, taking place August 26–28, will be particularly relevant for designers working on AI power delivery and intelligent motion systems. EPC will demonstrate its GaN portfolio across the power-conversion chain, from 800 VDC distribution to point-of-load conversion, while its roadmap points toward two developments with potentially broader implications: Gen 8 GaN for ultra-high-frequency, low-voltage power conversion and Trinity, EPC’s approach to highly integrated GaN motor drives.

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