EPC90124: 200 V, 8 A Development Board


The EPC90124 development board is a 200 V maximum device voltage, 8 A maximum output current, half bridge with onboard gate drives, featuring the EPC2053 enhancement mode (eGaN®) field effect transistor (FET).

The EPC90124 development board is 2” x 2” and contains two EPC2053 eGaN FETs in a half bridge configuration using the Texas Instruments LMG1210 gate driver.

To simplify the evaluation process of the EPC2053 GaN FET, all the critical components are included on a single board that can be easily connected into any existing converter. Video: How to Turn an EPC Development Board into a Prototype

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eGaN FET及集成电路