EPC90147: 100 V, 22 A Half-Bridge Development Board
Using EPC23102 GaN ePower™ Stage IC


The EPC90147 development board is a 100 V maximum device voltage, 22 A maximum output current, half bridge with onboard gate drives, featuring the EPC23102 integrated ePower™ Stage. The purpose of this development board is to simplify the evaluation process of the EPC23102 by including all the critical components on a single board that can be easily connected into most existing converter topologies.

The EPC90147 development board is 2” x 2” and contains one EPC23102 integrated ePower™ Stage in a half bridge configuration. The board also contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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eGaN FET及集成电路