EPC90149: 40 V, 40 A GaN-based half-bridge development board

EPC90149: – 40 V, 40 A Half-Bridge Development Board Using EPC2066


The EPC90149 is a half-bridge development board with onboard gate drive featuring the 40 V rated EPC2066 eGaN® FET. The purpose of this development board is to simplify the evaluation process of the EPC2066 by including all the critical components on a single board that can be easily connected into most existing converter topologies.

The EPC90149 development board measures 2” x 2” and contains two EPC2066 GaN FETs in a half bridge configuration and one EPC2038 GaN FET used to augment the bootstrap supply. The EPC90149 features the uPI Semiconductor uP1966E gate driver. The board contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

Ask and EPC Engineer a Question FAQ

eGaN FET及集成电路