EPC90156: 100 V, 65 A GaN-based half-bridge development board

EPC90156: 100 V, 65 A Half-Bridge Development Board
Featuring EPC2361


The EPC90154 is a half-bridge development board with onboard gate drive featuring the 100 V rated EPC2361 eGaN® FET. The purpose of this development board is to simplify the evaluation process of the EPC2361 by including all the critical components on a single board that can be easily connected into most existing converter topologies.

The EPC90156 development board measures 2” x 2” and contains two EPC2361 GaN FETs in a half bridge configuration. The EPC90156 features the Up1966E gate driver. The board contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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eGaN FET及集成电路