EPC9057 : 80 V Half Bridge with Gate Drive

The EPC9057 development board is a 80 V maximum device voltage, 6 A maximum output current, half bridge with onboard gate drives, featuring the EPC2039 enhancement mode (eGaN®) field effect transistor (FET).

The purpose of this development board is to simplify the evaluation process of the EPC2039 eGaN FET by including all the critical components on a single board that can be easily connected into any existing converter.


* Assumes inductive load, maximum current depends on die temperature – actual maximum current with be subject to switching frequency, bus voltage and thermal cooling.

# Dependent on time needed to ‘refresh’ high side bootstrap supply voltage.