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eGaN™-Silicon Power Shoot-Out: Part 1 Comparing Figure of Merit (FOM)
Posted 2010年8月31日
One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.
By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010
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