EPC’s enhancement-mode gallium nitride (eGaN®) power devices have been in mass production since 2010, and their base technology is orders of magnitude better than the silicon theoretical limit. GaN devices offer several advantages over silicon devices, including:
- Higher efficiency
- Higher power density
- Smaller size and weight
- Reduced cost
EPC has presented at various industry events, including online webinars, onsite webinars, and exhibitions. You can revisit our presentations and watch any videos we recorded at your convenience.
Learn how GaN power devices can improve your designs!