GaN技术杂谈

GaN FET 与任何其他类型的晶体管一样，在开关过程中会耗散 功率 ，并以热量的形式表现出来。如果超过特定的温度限制，可能会损坏这些器件。因此，热管理是转换器设计中的重要环节。

作者：Maurizio Di Paolo Emilio，《Data Centre Digest》特约编辑

氮化镓（GaN）正在进入一个新的发展阶段。在激光雷达、卫星电源、快速充电器和AI电源供电等应用中确立了自身地位之后，这项技术正越来越多地迈向低电压、大电流应用领域，而在这些应用中，开关速度、低导通损耗和功率密度至关重要。

Encouraging developers to design high-performance Class-D audio amplifiers leveraging GaN FETs, Efficient Power Conversion (EPC) has launched the new EPC9192 reference design, enabling high power and high efficiency Class-D audio amplifiers in a modular design. audioXpress reviews the EPC9192 to confirm the performance capabilities of EPC’s 200V, EPC2307 eGaN FETs in a ground-referenced, split dual supply single-ended (SE) design, rated to deliver 700W per channel into a 4Ω load.

Qian Luo, Author, WBG TechnoBite

In humanoid robot wrists and dexterous hands, as well as compact drone propulsion systems, motor drives are moving from external controller boards into the actuator itself. At that point, the inverter is no longer an independent unit that simply delivers three-phase current to the motor; it must share a tightly constrained space with the motor, position sensor, mechanical structure, and thermal path.

This changes the design priorities for compact motor drives. Continuous current and torque capability certainly depend on the power devices, but where the DC-link capacitors can be placed, whether heat can be transferred into the housing or airflow, and how sensing and protection signals are routed all shape the final system performance.

As AI infrastructure, humanoid robots, drones, autonomous machines and space systems push power electronics toward higher efficiency and power density, gallium nitride (GaN) is moving into increasingly demanding applications. At PCIM Asia 2026 in Shenzhen, Efficient Power Conversion (EPC) will showcase its latest GaN technology while offering a preview of where the company believes the technology is heading next. The event, taking place August 26–28, will be particularly relevant for designers working on AI power delivery and intelligent motion systems. EPC will demonstrate its GaN portfolio across the power-conversion chain, from 800 VDC distribution to point-of-load conversion, while its roadmap points toward two developments with potentially broader implications: Gen 8 GaN for ultra-high-frequency, low-voltage power conversion and Trinity, EPC’s approach to highly integrated GaN motor drives.

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氮化镓（GaN）正在推动功率电子技术变革，应用范围从低压电机驱动扩展到兆瓦级人工智能数据中心。在本次访谈中，EPC 详细介绍了第七代以及即将推出的第八代氮化镓器件如何在电容、面积和功率密度等方面实现相较硅器件最高达 5 倍的优势，从而开拓 40 V 及以下市场，并为 GPU 实现先进的负载点电源转换。讨论内容涵盖采用 48 V 总线的高性能机器人、面向 800 V 系统的多电平 ISOP 拓扑、通过参考设计实现快速原型开发，以及氮化镓在太空应用中日益重要的作用。

EPC91123 是一款基于 GaN 的 6 kW DC-DC 转换器参考设计，可为 AI 服务器和高性能计算提供隔离式 800 V 至 12.5 V 电源转换。该设计采用输入串联、输出并联（ISOP）架构，由八个交错运行的 LLC 模块组成，每个模块处理约 750 W 功率。初级侧开关采用 150 V EPC2305 GaN 场效应晶体管（FET），次级侧同步整流采用 40 V EPC2366 器件，使系统能够在约 1 MHz 的开关频率下运行。该架构可减小磁性元件尺寸、降低 EMI 并减少热热点，实现超过 98% 的峰值效率，以及在接近满载、近 500 A 输出时仍保持超过 97% 的效率。

在PCIM展会上，LTspice和QSPICE的创建者Mike Engelhardt解释了为什么传统SPICE—最初为IC设计而构建—难以准确仿真功率器件，尤其是GaN FET。他回顾了历史上的电容模型（Meyer、Yang–Chatterjee），以及它们在VDMOS和GaN中的局限性，并介绍了QSPICE如何引入原生GaN MOSFET模型（level 2026），以实现准确的电荷、输出电容和准饱和行为建模。Engelhardt详细说明了数值计算方面的改进、跨电容的正确处理方式，以及使QSPICE成为更快速、更稳健的电力电子仿真器的性能提升。