GaN技术杂谈

随着人工智能（AI）、机器人和太空系统重新定义功率电子学的可能性，氮化镓（GaN）技术持续引领这一变革。在最近接受 Electronic Product Design & Test (EPDT) 的采访中，EPC 的首席执行官兼联合创始人 Alex Lidow 博士分享了他对 GaN 如何重塑半导体格局的见解——以及这种快速发展的技术接下来将走向何方。

Prognosticators do not often risk their reputations by giving their predictions a “checkup” midway through the period of their predictions. But, I am going to give it a shot and here we go…

In March 2010 Efficient Power Conversion (EPC) proudly launched our GaN technology at the CIPS conference in Nuremberg, Germany.  Parts and development kits were readily available off-the shelf and therefore designers could immediately get started with a new state-of-the-art semiconductor technology.

At that time, we listed four key attributes we believed a new semiconductor technology needed in order to be really disruptive to the end markets.  A lot has happened in the six years since.  GaN has continued to ascend as the presumptive replacement for the aging power MOSFET, yet there are still a few design engineers and technical managers that remain skeptical.  So let’s look again at these four key attributes and see where GaN stands in addressing them.