示采用EPC公司的eGaN技术的各种应用

GaN technology is being designed into many end-customer applications. At premier events all over the world, EPC showcases more than 25 applications where GaN technology is Changing the Way We Live. In this series of short videos, EPC application engineering experts present eGaN® FETs and ICs in a wide range of applications including products that customers are currently taking to market.

各种应用演示

How eGaN Transistor Technology Improves LiDAR Performance

How eGaN Transistor Technology Improves LiDAR Performance
One big application area for eGaN transistor technology is in the lidar units built into autonomous vehicles and drones. EPC's Alex Lidow explains why eGaN excels at powering lidar lasers and why both solid-state and rotating lidar units will have roles in new robotics.

Why Gate Drivers are Joining eGaN Transistors on the Same Chip

Why Gate Drivers are Joining eGaN Transistors on the Same Chip
Power transistors made with eGaN technology can switch in a nanosecond or less. The circuit necessary to drive these transistors tend involve a lot of parasitic elements that can contribute to ringing and other sub-optimum effects. As explained by EPC's Alex Lidow, combining the eGaN gate driver on the same chip as the power transistor itself avoids such problems. The resulting gate drive/power transistor can run directly from a CMOS logic chip. This simplifies the design of power electronics as used for wireless power schemes that eliminate the need for ac cords.

Graphics-Intensive Applications Benefit From Power-Dense eGaN DC-DC Converters

Graphics-Intensive Applications Benefit From Power-Dense eGaN DC-DC Converters
A 720-W demo design illustrates the benefits of using eGaN power transistors in dc/dc converters. As explained by EPC's Alex Lidow, the reference board is super small and hits 1,400 W/cubic inch with a 96% energy efficiency and a BOM cost of just six cents per watt. The hard-switching buck converter operating at 700 kHz delivers the kind of power density that comes in handy for high-end video gaming, bitcoin mining, and other applications that make intensive use of graphics processors.

Cut the Cord!  GaN-Based Wirelessly Powered Tabletop

剪断电源线!基于氮化镓技术的无线充电桌面
EPC公司首次展示在桌面上可以同时对多个设备进行无线充电。本视频描述在该桌面上,我们可以同时对笔记本电脑、电视显示屏、Google Home、Amazon Alexa、台灯、床头灯及手机进行无线充电。除了创新的天线设计,该桌子是基于EPC的氮化镓(GaN)功率技术。氮化镓技术不仅仅是对手机进行无线充电,而是可以对我们的智能家居进行无线充电。

GaN Laser Diode Driver for LiDAR

面向激光雷达应用的氮化镓雷射二极管驱动器
激光雷达(LiDAR)使用雷射脉冲快速形成三维图像或为周围环境制作电子地图。这种技术迅速被各种需要更高准确性的应用所采用,例如自动驾驶汽车及扩增实境系统。相比日益老化的MOSFET器件,目前氮化镓场效应晶体管的开关速度快十倍,使得LiDAR系统具备优越的解像度、更快速反应时间及更高准确性等优势。

GAN FET vs. MOSFET:  48 V – 1.8 V DC-DC Conversion

在48 V - 1.8 V DC/DC转换采用GaN FET 与MOSFET的比较
EPC公司最新一代的工艺再一次击败硅基MOSFET功率元件,实现更高性能的元件而同时缩小元件的尺寸及降低成本。本视频展示出100 V 的GaN FET与等效MOSFET相比,GaN FET的性能更高、小很多的占板面积、功耗低30%及提高功率密度达3倍。

GAN FET vs. MOSFET:  150 V – 12 V DC-DC Conversion

在150 V - 12 V DC/DC转换采用GaN FET 与MOSFET的比较
EPC的产品再一次击败硅基MOSFET功率元件,实现更高的性能而同时缩小元件的尺寸及降低成本。本视频展示出200 V的 GaN FET与等效MOSFET相比,GaN FET的性能更高、大大减小占板面积(器件的尺寸缩小15倍)、功耗低出40%及提高功率密度达3倍。

Motor Drive Applications

马达驱动器应用
本视频展示出德州仪器公司的48 V、10 A、3相位的氮化镓逆变器参考设计,采用了LMG5200器件。 基于氮化镓的解决方案具有更优越的散热特性/模式 – 不需散热器、更低的电感可以缩小器件的尺寸及更轻盈。此外,功耗更低及转矩纹波(torque ripple)可使得马达控制更准确。这个参考设计可实现难以置信的98.5% 效率。

eGaN FETs for Envelope Tracking

面向包络跟踪应用的eGaN FET
包络跟踪是一种电源技术,与目前的固定电源系统相比,包络跟踪技术可透过找出精确的电源需求来提高射频功率放大器的能效。该技术可以使得基站的效率倍增及延长移动电话的通话时间。在本视频,我们讨论60 W、20 MHz频宽、4相、与LTE兼容、基于eGaN FET及面向包络跟踪应用的演示板的超快速性能。

700 W DCX DC-DC Conversion in Eighth-Brick DOSA Form Factor

利用eGaN技术在1/8砖式DOSA外形设计实现700 W的DCX DC/DC转换器
本视频展示使用1/8砖式 DC/DC转换器尺寸、以DCX模式操作的700 W DC/DC转换器。我们可以看到,在传统的DC/DC 砖式占板面积上,由于eGaN FET具备卓越的开关特性、散热性能及小尺寸等优势,因此eGaN FET可以实现更高的功率密度。