Why Gate Drivers are Joining eGaN Transistors on the Same Chip

Power transistors made with eGaN technology can switch in a nanosecond or less. The circuit necessary to drive these transistors tends to involve a lot of parasitic elements that can contribute to ringing and other sub-optimum effects. As explained by EPC's Alex Lidow, combining the eGaN gate driver on the same chip as the power transistor itself avoids such problems. The resulting gate drive/power transistor can run directly from a CMOS logic chip.