EPC90121: 350 V, 4 A Half-Bridge Development Board
The EPC90121 development board is a 350 V maximum device voltage, 4 A maximum output current, half bridge with onboard gate drives, featuring the EPC2050 GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2050 by including all the critical components on a single board that can be easily connected into most existing converter topologies.
The EPC90121 development board is 2” x 2” and contains two EPC2050 GaN FETs in a half bridge configuration with the On-Semi NCP51820 gate driver. The board also contains all critical components and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.