杂志：Bodo's Power Systems
作者：Steve Soffels, Denis Marcon, and Stefaan Decoutere （IMEC）
日期：1/2/2013
摘要：在功率电子行业中，氮化镓技术从小众、专业市场扩展。第一代氮化镓晶体管现正扩 大其在功率电子市场的份额。

阅读全文

作者：Ashok Bindra
杂志：How2Power Today （2012年12月刊）

在过去的数年间虽然有很多讨论关于基于氮化镓的功率晶体管可以替代普遍使用的硅MOSFET器件，但硅基氮化镓的功率场效应晶体管可能需要较长的时间才可以在电源转换领域成为主流器件。目前数个全新应用的出现将有望实现氮化镓技术所提供的优势。除了具备商用及高可靠性的条件，氮化镓器件的独有特性正在促进全新应用的出现。

阅读全文

By: Sun Changhua
Digitimes.com
December 20, 2012

阅读英文/简体版

The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.

http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable

eGaN® FET 的高性能正在更快地被DC/DC 电源转换、负载点转换器、D类音频放大器及高频电路等应用采用，而TI推出业界首款100V半桥GaN FET驱动器（LM5113），经过优化，配合氮化镓场效应晶体管使用，则更进一步推动eGaN FET在高性能电信、网络以及数据通信中心的应用。

详情请浏览：

电子设计技术（2012年4月书刊

EDN 电子杂志2012年第04期

Written by Peter Clarke - 3/7/2012 2:20 PM EST

LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.

But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.

By: Graham Pitcher
New Electronics
December 13, 2011
Read the article

Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.

By Margery Conner
EDN
August 25, 2011

Read the article

EPC推出第二代200V及100mΩ功率晶体管

http://www.ed-china.com/ART_8800042836_400005_500002_HP_8eb619a0.HTM

http://www.esmchina.com/ART_8800117168_1500_2700_3601_0_af3a580e.HTM

宜普全新开发板EPC9004帮助开发电源转换系统

http://www.eet-china.com/ART_8800649298_480101_NP_0b9678d8.HTM

http://www.ednasia.com/article.asp?preview=1&id=28936

高度集成的半桥栅极驱动器提高了高压应用的功率密度和效率

EEFocus

閱讀全文

众所周知，宜普电源转换公司(EPC)推出商用化增强型硅基氮化镓场效应晶体管(宜普称之为eGaN FET)产品已经超过一年多时间了。目前宜普公司正在与合作伙伴一起实现eGaN FET的专用驱动器，使其可以工作在更高电压、更低栅极电荷条件下，仍具更低的RDS(ON)，以及没有反向恢复损耗(QRR)——所有这些特性都在比硅产品更小的裸片面积上实现。相比硅MOSFET，eGaN FET实际上可以显著提升品质因数(FOM)。

By Ashok Bindra
How2Power
June, 2011

Read the article

GaN (Gallium-Nitride) FETs appear poised to eat into silicon FETs market share as switching devices for high-voltage power conversion circuits.

By Margery Conner
EDN
June 20, 2011

Read the article

我们对功率半导体最基本的要求是性能、可靠性、管控性及成本效益。它的高频率性能，可切合稳压器系统于体积及瞬态响应方面的需要而具更高价值，并为D类功率放大器提供高保真度。一个新器件结构如果不高效、不可靠的话，根本不可能商品化。市场上有很多新结构及原料可选择，但是接受度有限。不过，现在有氮化镓(Gallium Nitride/GaN)增强型功率管控器件问世，具有高导电性、极快开关、硅器件之成本结构及基本操作模式等优异性能，其代表就是宜普公司的新产品。

Stephen Colino, Robert Beach
今日电子
2010年9月

閱讀全文

自2004年GaN HEMT(高电迁移 率晶体管)问世以来，基于GaN材料 的新技术不断涌现，但由于成本偏 高和耗尽型 作的不方便，GaN晶体 管市场接受度一直受限，不过这一 局面有望得到改观。美国宜普公司 最近推出首款增强型硅基GaN功率晶 体管(简称eGaN FET)，可专门用于 替代MOSFET，而且使用标准硅制 造技术和设备，可以低成本大批量 生产。

閱讀全文

EPC, the first company to deliver enhancement mode GaN (eGaN™) FETs to the market, has been recognized by EDN for inclusion on their list of "100 Hot Products for 2010."

Read the article

The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board bus converters, which in turn supply power to nonisolated, dc-dc converters. These nonisolated converters generate the low supply voltages required to power the various logic circuits. Because of their proximity to the circuits they power, these converters are commonly referred to as point-of-load converters (POLs).

By Johan Strydom, EPC, El Segundo, Calif. and Bob White, Embedded Power Labs, Highlands Ranch, Colo.
How2Power
November, 2010

Read the article

The latest report from Yole Développement “GaN Technologies for Power Electronics Applications: Industry and Market Status & Forecasts” says the Total Accessible Market is $16.6b and is envisioned to be split into Power ICs, Power Discretes and Power Modules.

Compound Semiconductor
October 28, 2010

Read the article

EPC, the first company to deliver enhancement mode GaN (eGaNTM) FETs to the market, has been named in EE Times ‘60 Emerging Startups’ list for the second consecutive year

By Peter Clark
EE Times
November 7, 2010

Read the article

The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

Read the article