航空航天应用的技术发展是 2021 年的重要组成部分，因此更多的抗辐射元件即将问世。 最近新推两款新型场效应晶体管，它们给航太领域带来了什么？

All About Circuits
2021 年 6 月
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Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

In this episode, Alex Lidow and Marti McCurdy discusses EPC’s test-to-failure method in improving gallium nitride (GaN) devices. According to Alex, testing to failure has allowed EPC to tease out the exact stressors that cause failure and improve EPC’s GaN devices 10-100 times the reliability of commercial devices, and even 100 times reliability in space applications.

Alex and Marti discuss:

(1:30) Why test to fail
(4:14) Learning from failure data and stressors
(11:38) Safe Operating Area
(14:30) Mechanical stressors
(17:45) EPC Space

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Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
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硅功率MOSFET未能跟上电力电子行业的发展变化，而效率、功率密度和更小的外形尺寸等因素是行业的主要需求。 硅MOSFET器件的性能已达到其理论极限，并且由于电路板的空间非常宝贵，因此功率系统设计人员必需找出替代方案。 氮化镓（GaN）器件是一种高电子迁移率晶体管（HEMT），这种半导体正为新兴应用不断增值。

EETimes
2020年8月
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氮化镓功率晶体管是面向严苛航太任务的功率和射频应用的理想器件。 通过全新基于eGaN^®器件的解决方案，EPC Space公司提供专门为商业卫星关键应用而设计的氮化镓器件，可确保器件的耐辐射性能和对单粒子效应的免疫能力。 这些器件具有极高的电子迁移率、低温度系数和非常低的导通阻抗。

EETimes
2020年7月
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增强型氮化镓（eGaN^®）技术使能新一代功率转换器，让转换器能够在更高的频率、更高的效率和前所未有的高功率密度下工作。 与硅MOSFET器件相比，eGaN器件还具有更优越的耐辐射性能。

Bodo’s Power Systems
2020年7月
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面向关键宇航应用及其它高可靠性应用环境，合资公司EPC Space为客户提供先进、高可靠性的氮化镓功率转换解决方案，从而确保更可靠的操作和任务成功。

宜普电源转换公司（EPC）与VPT公司（海科航空公司旗下公司、NYSE交易代号为HEI.A及HEI）宣布成立合资公司EPC Space LLC，针对卫星及高可靠性应用，从事设计和制造耐辐射、采用封装、通过测试和经认证合格的硅基氮化镓晶体管和集成电路。

This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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美国加州MILPITAS - 2016年5月 25日美通社专讯 --占领电源管理和精确模拟解决方案的市场领导地位的Intersil Corporation (纳斯达克指数NASDAQ代号: ISIL) 宣布计划进一步扩大其业界领先、面向卫星应用的耐辐射产品系列，在卫星及其它恶劣环境采用具备高可靠性的氮化镓（GaN）功率转换集成电路。

美通社
2016年5月25日
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Freebird Semiconductor and Efficient Power Conversion (EPC) have entered into an agreement whereby Freebird will develop products for use in high reliability space and harsh environment applications based upon eGaN^® power transistors and integrated circuits.

NORTH ANDOVER, MA. — April 2016 — Freebird Semiconductor Corporation, North Andover, Massachusetts announces the signing of an agreement with Efficient Power Conversion Corporation (EPC), the leading provider of enhancement-mode gallium nitride power transistors to develop products for use in high reliability, space, and harsh environment applications based upon EPC’s eGaN^® technology.