EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

专为功率系统设计师而设的EPC2052功率晶体管是一种100 V、13.5 mΩ并采用超小型芯片级封装的晶体管，可实现74 A脉冲输出电流。面向48 V-12 V DC/DC功率转换器，这些新一代氮化镓场效应晶体管工作在500 kHz频率下，可实现超过97%的效率。如果工作在1 MHz时，则实现超过96%的效率。

宜普电源转换公司（EPC）宣布推出100 V的EPC2052氮化镓场效应晶体管，其占板面积只是2.25平方毫米、最大导通阻抗(R_DS(on))为13.5 mΩ及脉冲输出电流高达74 A 以支持高效功率转换。

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 V_IN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17^th through the 21^st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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作为为支持DC/DC、激光雷达（LiDAR）、无线电源应用等方面不断扩大的客户群进行扩展的一部分，宜普电源转换公司（EPC）扩大了其在亚洲的团队，增加的新成员将与整个亚太地区21个地区的客户保持密切联系。

2018年11月28日— 为了支持在亚太地区正在加速的销售增长，宜普电源转换公司（EPC）宣布扩大亚太地区的销售和FAE团队，以支持其不断扩大的客户群，积极获取全新的业务发展及抓住全新的市场商机。

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

宜普公司的EPC9130五相开发板展示出采用高频开关eGaN^®功率晶体管、极小型化及增强了效率的电源转换方案。

宜普电源转换公司(EPC)的EPC9130 开发板是一款48 V转换至12 V的非隔离稳压式开发板、具用五个相位、每相具12 A、最大输出电流为60安培，开发板的输出功率可以超过700 W。该板具超高功率密度（每立方英寸大于1250 W），其效率高于96%。

During last week's PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic. “The use of GaN switches in 48V-to-1V direct dc-dc converters can improve system performance by 30%, compared with today’s best silicon-based designs,” commented Alex Lidow, CEO of Efficient Power Conversion.

PowerPulse
May 31, 2017
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通信的数学基础始于信息论的创始人Claude Shannon于1948的著作《通信的数学理论》。他把信息通信简化为1及0数字，实质上是二进制数字。该理论可以于现实世界中有噪声的环境下，准确无误地传输数据。Shannon在2016年4月30日本来是他的百年诞辰。

EDN Network
Steve Taranovich
2016年4月16日
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