欢迎您与氮化镓（GaN）技术专家一起在CES的EPC虚拟展台中，探索基于更高效、更小尺寸和更低成本的氮化镓场效应晶体管和集成电路的解决方案，如何增强消费电子产品的功能和性能。

宜普电源转换公司（EPC）宣布在1月11日至14日举行的全数字国际消费电子展（CES）展示其eGaN^®技术如何改变了消费电子应用的游戏规则并提高产品性能，包括全自动驾驶汽车、电动交通、无人机、机器人和48 V功率转换等应用。

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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