宜普电源转换公司(www.epc-co.com) 宣布其硅基增强型氮化镓(eGaN®)功率FET系列器件获得声望很高的《电子工程专辑》颁发年度电子创新(ACE)奖项的能源技术大奖。ACE奖项旨在表彰在全球产业中展现领先和创新精神并使我们生活更加美好的技术创造者。

“我们非常荣幸能够获得ACE奖项。这个奖项证明宜普的增强型GaN功率晶体管为电源转换技术领域带来重大突破。我们相信硅基MOSFET的表现已经走到了尽头，eGaN技术将引领电源管理解决方案的表现持续改进。” 宜普公司合伙创始人、首席执行官Alex Lidow表示。

Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.

EL SEGUNDO, Calif-January 6, 2011 — Efficient Power Conversion Corporation’s (EPC) family of enhancement-mode gallium nitride on silicon (eGaN™) power FETs have been honored with an Electronic Products’ Product of the Year award.

The editors of Electronic Products — a leading trade publication for electronic design engineers — evaluated thousands of products launched in 2010. The winning products were selected on the basis of innovative design, significant advancement in technology or application and substantial achievement in price and performance. The eGaN FETs demonstrated success in the category of discrete semiconductors.

EPC, the first company to deliver enhancement mode GaN (eGaN™) FETs to the market, has been recognized by EDN for inclusion on their list of "100 Hot Products for 2010."

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EPC, the first company to deliver enhancement mode GaN (eGaNTM) FETs to the market, has been named in EE Times ‘60 Emerging Startups’ list for the second consecutive year

By Peter Clark
EE Times
November 7, 2010

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