EL SEGUNDO, Calif-March 8, 2010 -Efficient Power Conversion Corporation (EPC) today introduced a family of enhancement mode power transistors based on its proprietary Gallium Nitride on Silicon technology.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.

EL SEGUNDO, Calif. - March 8, 2010 -Efficient Power Conversion Corporation (EPC) today announced that Digi Key Corporation will be the exclusive global distributor for EPC’s line of enhancement-mode Gallium Nitride power transistors.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.

The enhancement mode -normally OFF- GaN technology was explicitly developed to replace power MOSFETs. Says Alex Lidow, EPC’s co-founder and CEO, enhancement mode - rather than depletion mode - is essential for GaN to become a broad-scale silicon power MOSFET replacement.

By Margery Conner
EDN
March 5, 2010

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A breakthrough in processing gallium nitride (GaN) on a silicon substrate has produced enhancement-mode FETs with high conductivity and hyperfast switching. Its cost structure and fundamental operating mechanism are similar to silicon-only MOSFET alternate.

Article By Sam Davis, Editor in Chief
Power Electronics Technology
March 1, 2010

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