The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.

Robotics Tomorrow
March, 2022
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我们将在本文讨论客户为何迟迟未采用氮化镓技术的一些最常见原因，氮化镓技术显然是较旧的硅基功率MOSFET的替代技术。在不深入研究详细的统计数据下，按最常发生推导出一系列原因，并理解某些应用比其他应用更侧重氮化镓技术的某些特性。我们的讨论仅限于额定电压低于400 V的器件，因为这是EPC公司的氮化镓场效应晶体管和集成电路的重点应用。

PSD功率系统设计
2022年3月
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由氮化镓技术专家 EPC 与 MPS 合作开发的双向转换器可实现97%的峰值效率。

EETimes
2022年2月
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A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.

Power Electronics Tips
February, 2022
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This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.

Electronics Today
December/January Edition
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Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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EPC公司推出了100 V、65 A 集成电路芯片组，专为 48 V DC/DC 转换而设计，用于高密度计算应用，以及用于电动汽车、机器人和无人机的 48 V BLDC电机驱动器。EPC23101 eGaN IC 配合 EPC2302 eGaN FET成为ePower芯片组，其最大耐受电压为 100 V，提供高达 65 A 的负载电流，开关速度大于 1 MHz。

Bodo’s Power Systems
2022 年 2 月
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The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.

Energies Journal
October, 2021
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Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.

All About Circuits
October, 2021
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The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.

EEPower
October, 2021
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The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.

Electronics Weekly
September, 2021
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在过去十年中，计算机、显示器、智能手机和其他消费电子系统变得更薄，同时功能也变得更强大。因此，市场对具有更高功率密度的更纤薄电源解决方案的需求不断增加。本文研究了额定功率为 250 W且超薄的48 V / 20 V转换器，它可以采用各种非隔离型 DC/DC 降压拓扑的可行性。我们研究了各种非隔离型拓扑的优缺点，从而了解拓扑如何影响功率晶体管和磁性元件的选择，特别是电感器，因为这两个器件产生转换器的大部分损耗。本文还详细分析了为这些应用设计薄型电感器所面对的挑战，包括电感器损耗的因素、电感器尺寸和设计权衡，包括对 EMI 的影响。我们是以选择、构建和测试了超薄多电平转换器拓扑。从该转换器获得的实验结果，用于进一步优化操作设置和元件的选择，从而实现超过 98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年９月
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随着数据处理基础设施的持续快速增长，市场要求在最小的占板面积内提供更高的功率。

Power Systems Design
2021年9月
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随着采用氮化镓（GaN）器件的应用越来越多，Bodo Arlt 借此机会与 EPC公司的首席执行官兼共同创办人 Alex Lidow 谈及他认为这种不断发展的技术的 下一个重点市场。

Bodo’s Power Systems
2021 年 9 月
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由 Bodo Power Systems 主办的氮化镓行业专家圆桌会议的嘉宾包括：

1. EPC公司的首席执行官兼共同创始人Alex Lidow
2. Power Integrations公司的市场营销与应用工程副总裁Doug Bailey
3. Nexperia 公司的氮化镓功率技术营销战略总监Dilder Chowdhury
4. Navitas Semiconductor公司的市场营销战略高级总监Tom Ribarich