Wide-bandgap semiconductors like gallium nitride (GaN) and silicon carbide (SiC) are changing how people are thinking about power. In this video, Electronic Design talks to Alex Lidow, Founder and CEO of Efficient Powert Conversion (EPC), about the growing role of GaN in advanced embedded applications like automotive, among others such as space.

Electronic Design
January, 2022
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The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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瑞萨电子(Renesas)的两相同步GaN升压控制器与宜普电源转换公司（EPC）的超高效eGaN^® FET相结合，实现了高功率密度和低成本的DC/DC转换。

宜普电源转换公司(EPC)宣布推出12 V输入、48 V输出、500 W的DC/DC演示板（EPC9166）。该演示板展示出瑞萨电子ISL81807 80 V两相同步升压控制器和宜普公司最新一代EPC2218 eGaN FET，在开关频率为500 kHz的12 V输入到48 V稳压输出转换中，效率超过96.5%。输出电压可配置为36 V、48 V和60 V。该板在没有散热器的情况下，可提供480 W的功率。

In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.

Energies Journal
October, 2021
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Mature, low-cost manufacturing and proven reliability spur use in EVs, smartphones, and consumer electronics.

Efficient Power Conversion (EPC) has logged more than 100 emerging applications for its eGaN FETs and ICs. Alex Lidow, the company’s CEO, said the five fastest-growing applications are lidar systems for robotics, drones, consumer products, driver alertness systems, and autonomous vehicles; DC-DC converters for AI systems, servers, and telecom power systems; motor drives for e-mobility and robotics; satellite systems, including motor drives and DC-DC power supplies that require radiation hardness; and solar power point trackers.

Semiconductor Engineering
December, 2021
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EPC announces the introduction of a 100 V, 65 A integrated circuit chipset designed for 48 V DC-DC conversion used in high-density computing applications and in 48 V BLDC motor drives for e-mobility, robotics, and drones.

The EPC23101 eGaN IC plus EPC2302 eGaN FET offers a new ePower Chipset capable of a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

EE World Online
December, 2021
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宜普电源转换公司（EPC）推出ePower芯片组系列。该系列集成了100 V氮化镓驱动器和场效应晶体管，可实现高达65 A的输出电流，为高功率密度应用提供更高的性能和更小型化的解决方案，包括DC/DC转换和电机驱动等应用。

宜普电源转换公司宣布推出100 V、65 A的集成电路芯片组，专为48 V DC/DC转换 而设计，用于高密度计算应用和用于电动汽车、机器人和无人机的48 V BLDC电机驱动器。

EPC公司为电源系统设计工程师提供全新的100 V、23 mΩ 功率晶体管（EPC2070），它采用微型芯片级封装并提供34 Ａ脉冲电流，非常适合 60 W、48 V 电源转换器、激光雷达和 LED 照明等应用。

宜普电源转换公司(EPC)宣布推出100 V的氮化镓晶体管（EPC2070），具有23 mΩ 的最大导通阻抗和34 A脉冲输出电流，可在细小的1.1 mm²占板面积实现高效功率转换。

Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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The EPC9145 GaN-based inverter enhances the performance of the motor for range, precision, torque, and, as a bonus, eliminates the electrolytic capacitors for lower overall system cost and higher reliability. The extremely small size allows integration into the motor housing for the lowest EMI, highest density, and lowest weight.

EL SEGUNDO, Calif.— November, 2021 — EPC announces the availability of the EPC9145, a 1 kW, 3-phase BLDC motor drive inverter using the EPC2206 eGaN^® FET

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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EPC9163是一款两相48 V/12 V双向转换器，可提供2 kW的功率和实现96.5%的效率，是适用于轻度混合动力汽车和备用电池装置的小型化解决方案。

宜普电源转换公司（EPC）宣布推出EPC9163，这是一款 2 kW、两相的48 V /12 V双向转换器演示板，可在非常小的占板面积上实现 96.5%的效率。该演示板的设计具有可扩展性 - 并联两个转换器可以实现4 kW的功率，或者并联三个转换器以实现6 kW。该板采用8个100 V 的eGaN^® FET（EPC2218），并由模块控制，该模块采用Microchip公司的dsPIC33CK256MP503 16位数字控制器。

EPC推出了40 V、1.3 mΩ的氮化镓场效应晶体管 （eGaN^®EPC2067，专为设计人员而设。EPC2067比MOSFET更小、更高效、更可靠，适用于高性能且空间受限的应用。

宜普电源转换公司（EPC）是增强型硅基氮化镓功率晶体管和集成电路的全球领导者。新推的EPC2067（典型值为 1.3 mΩ、40 V）扩大了可选的低压器件，可立即供货。

50 W、12 V/60 V且基于eGaN^® FET的同步升压转换器采用简单、低成本的拓扑结构，可实现 95.3%的峰值效率和低温升。

宜普电源转换公司（EPC）宣布推出双向降压或反向升压转换器演示板（EPC9162）。该演示板用于同步转换器时采用100 V的EPC2052器件，以及用于同步自举FET电路时，采用EPC2038器件。

This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.

All About Circuits
October, 2021
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The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.

EEPower
October, 2021
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The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
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