客户可以在我们的网页 注册 ，定期收取最新消息包括全新产品发布、应用文章及更多其它资讯。如果你错过了已发布的资料，你可浏览以下的文档。
Driving eGaN™ Transistors for Maximum Performance
Posted 2010年9月13日
The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.
By Johan Strydom and Alex Lidow
September, 2010
Read the article