与采用传统硅器件的转换器相比，采用氮化镓基高电子迁移率晶体管 (HEMT) 具有许多材料和性能优势，已广泛用于消费和工业用功率转换领域。氮化镓器件在更高的开关频率下提高了功率转换效率，进而实现更低的系统成本和更高的功率密度。随着功率密度的增加，散热分析和热建模变得至关重要。我们将在本文分享EPC的热量计算器。 EPC公司制造增强型 GaN HEMT 和集成电路，例如支持多种转换器的半桥器件。

Power Electronics News
2023年11月
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A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.

Power Electronics Tips
February, 2022
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Enhancement-mode gallium nitride (eGaN) FETs have demonstrated excellent thermomechanical reliability in actual operation in the field or when tested according to AEC or JEDEC standards. This is because of the inherent simplicity of the “package,” the lack of wire bonds, dissimilar materials, or mold compound. Recently, an extensive study of underfill products was conducted to experimentally generate lifetime predictions. A finite element analysis at the end of this section explains the experimental results and generates guidelines for selection of underfill based on key material properties.

Bodo's Power
March, 2021
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This article discusses the challenges that thermal management raises due to increase power density, especially with chip-scale packaging (CSP). What is sometimes overlooked, however, is that CSP eGaN® power FETs and integrated circuits have excellent thermal performance when mounted on standard printed circuit board (PCBs) with simple methods for attaching heat sinks. Simulations, supported by experimental verification, examine the effect of various parameters and heat flow paths to provide guidance on designing for performance versus cost.

Bodo’s Power Systems
February, 2021
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eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters.

Power Electronics
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随着功率转换器需要更高的功率密度，晶体管必须配合不断在缩减的电路板面积。氮 化镓（GaN）功率晶体管除了可以提高电源效率外，它们也必须具备更高的热效率。在 这篇文章中，我们探讨采用芯片级封装的增强型氮化镓场效应晶体管（eGaN ^®FET） 的热性能，并与最先进的Si MOSFET比较两种器件的电气性能和热性能。

Bodo's China
2016年10月
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With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. This article evaluates the thermal performance of chip-scale packaged eGaN^® FETs and compares their in-circuit electrical and thermal performance with state-of-the-art silicon MOSFETs.

Bodo’s Power Systems
David Reusch, Ph.D. and Alex Lidow, Ph.D.
June 1, 2016
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