EPC的GaN专家将在其APEC展位展示各种应用所采用的最新一代GaN FET 和 IC。

宜普电源转换公司(EPC)是增强型氮化镓FET和IC领域的全球领导者，将于3月19日至23日在奥兰多举行的IEEE APEC 2023会议上发表多项技术演讲，详情请参阅下方时间表。此外，我们还会在奥兰治县会议中心的732号展位展示最新一代的 eGaN^®FET和IC，其应用范围包括高功率密度计算、电动汽车、机器人、太阳能、电池充电等。欢迎莅临参观“GaN之墙”,我们提供市场上最广泛的氮化镓功率半导体产品组合，可现成交付。

宜普电源转换公司(EPC)推出 200 V、10 mΩ的EPC2307，完善了额定电压为 100V、150 V和200 V的6个GaN晶体管系列，提供更高的性能、更小的解决方案和易于设计的DC/DC 转换、AC/DC SMPS和充电器、太阳能优化器和微型逆变器，以及电机驱动器。

全球增强型氮化镓FET和IC领导者EPC推出 200 V、10 mΩ的EPC2307，采用耐热增强型QFN封装，占位面积仅为3 mm x 5 mm。

Efficient Power Conversion (EPC) introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs offering higher performance and smaller solution size and cost for DC-DC conversion, AC/DC SMPS and chargers, solar optimizers and microinverters, and motor drives.

EL SEGUNDO, Calif.— December 2022 — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs, introduces the 150 V, 3 mΩ EPC2305 and the 200 V, 5 mΩ EPC2304 GaN FETs in a thermally enhanced QFN package with exposed top and tiny 3 mm x 5 mm footprint.

瑞萨电子(Renesas)的两相同步GaN升压控制器与宜普电源转换公司（EPC）的超高效eGaN^® FET相结合，实现了高功率密度和低成本的DC/DC转换。

宜普电源转换公司(EPC)宣布推出12 V输入、48 V输出、500 W的DC/DC演示板（EPC9166）。该演示板展示出瑞萨电子ISL81807 80 V两相同步升压控制器和宜普公司最新一代EPC2218 eGaN FET，在开关频率为500 kHz的12 V输入到48 V稳压输出转换中，效率超过96.5%。输出电压可配置为36 V、48 V和60 V。该板在没有散热器的情况下，可提供480 W的功率。

Gallium nitride (GaN) devices offer performance in a small form factor, increasing the efficiency, and reducing the system cost for 48 V power conversion applications. They have been adopted in high volumes in high density computing, as well as many new automotive power system designs.

Electronic Specifier
February, 2021
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The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16^th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

中压氮化镓场效应晶体管（eGaN FET）的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时，EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势，积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构，也成为了功率系统的全新标准。

Power Systems Design
2020年3月31日
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The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum R_DS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.