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In this episode, Alex Lidow and Marti McCurdy discusses EPC’s test-to-failure method in improving gallium nitride (GaN) devices. According to Alex, testing to failure has allowed EPC to tease out the exact stressors that cause failure and improve EPC’s GaN devices 10-100 times the reliability of commercial devices, and even 100 times reliability in space applications.
Alex and Marti discuss:
(1:30) Why test to fail
(4:14) Learning from failure data and stressors
(11:38) Safe Operating Area
(14:30) Mechanical stressors
(17:45) EPC Space
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Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.
Bodo’s Power Systems
September, 2020
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从2010年3月起,氮化镓(GaN)功率器件已经实现高可靠性并进行量产。本章详细阐析如何测试出器件在何时开始失效,从而了解数据手册给出的器件工作条件,距离其工作极限值还有多少余量。而最重要的是,找出器件固有的失效机理,了解其失效的根本原因、恒常操作情况、温度、电气应力或机械应力等,从而找出产品在一般工作条件下,它的安全使用寿命。
Power Systems Design
2020年3月
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