EPC9005:开发板

EPC Development Board

VDS(最大值)、40 V
ID(RMS最大值)、7 A
带板载驱动器的半桥配置

The EPC9005 development board is 2” x 1.5” and contains not only two EPC2014 eGaN FET in a half bridge configuration using Texas Instruments LM5113 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

产品状况:停产产品
在全新设计中,请採用EPC9005C产品
Ask and EPC Engineer a Question FAQ

对EPC公司的
eGaN FET及集成电路
有任何问题吗?
向GaN技术专家请教