VDS（最大值）,100 V
Id（RMS最大值）,35 A
Multiple Half Bridges
in Parallel
The EPC9013 development board features the 100 V EPC2001C enhancement mode (eGaN®) field effect transistor (FET) operating up to a 35 A maximum output current with four half bridges in parallel and a single onboard gate drive. The purpose of this development board is to simplify the evaluation process of the EPC2001C eGaN FET for high current operation by including all the critical components on a single board that can be easily connected into any existing converter.