EPC90137: 80 V, 25 A Development Board


The EPC90137 development board is a 80 V maximum device voltage, 25 A maximum output current, half bridge featuring the EPC2065 GaN field effect transistor (FET). The purpose of this development board is to simplify the evaluation process of the EPC2065 by including all the critical components on a single board that can be easily connected into most existing converter topologies.

The EPC90137 development board is 2” x 2” and contains two EPC2065 GaN FETs and one EPC2038 GaN FET in a half bridge configuration with the uP1966E gate driver. The board also contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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eGaN FET及集成电路