EPC90141: – 100 V Half-Bridge Development Board Using EPC2070 eGaN® FET


The EPC90141 development board is a 100 V maximum device voltage half bridge featuring the EPC2070 eGaN FET). The purpose of this development board is to simplify the evaluation process of the EPC2070 by including all the critical components on a single board that can be easily connected into the majority of existing converter topologies.

The EPC90141 development board measures 2” x 2” and contains two EPC2070 eGaN FETs in a half bridge configuration. The board also contains all critical components, and the layout supports optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

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eGaN FET及集成电路