EPC9048C: 200 V, 15 A Half-Bridge Development Board


The EPC9048C development board is a 200 V maximum device voltage, 15 A maximum output current, half bridge with onboard gate drives, featuring the EPC2034C enhancement mode (eGaN®) field effect transistor (FET).

The EPC9048C development board is 1.5” x 2” and contains two EPC2034C eGaN FETs in a half bridge configuration. The gate driver used on this board is ON Semi’s NCP51820.

To simplify the evaluation process of the EPC2034C GaN FET, all the critical components and layout for optimal switching performance are implemented. Video: How to Turn an EPC Development Board into a Prototype

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eGaN FET及集成电路

EPC9048C Parameters Table
(1) Maximum input voltage depends on inductive loading, maximum switch node ringing must be kept under 200 V for EPC2034C.
(2) Maximum current depends on die temperature – actual maximum current is affected by switching frequency, bus voltage and thermal cooling.
(3) When using the on board logic buffers, refer to the NCP51820 datasheet when bypassing the logic buffers.
(4) Limited by time needed to ‘refresh’ high side bootstrap supply voltage.