EPC9003:开发板

EPC Development Board

VDS(最大值)、200 V
ID(RMS最大值)、5 A
带板载驱动器的半桥配置

The EPC9003 development board is 2” x 1.5” and contains not only two EPC2010 eGaN FET in a half bridge configuration using Texas Instruments LM5114 gate driver, supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

产品状况:停产产品
面向新设计,EPC 氮化镓专家推荐EPC90124
Ask and EPC Engineer a Question FAQ

对EPC公司的
eGaN FET及集成电路
有任何问题吗?
向GaN技术专家请教