新闻

客户可以在我们的网页 注册 ,定期收取最新消息包括全新产品发布、应用文章及更多其它资讯。如果你错过了已发布的资料,你可浏览以下的文档。

PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

PCIM Europe 2024: A Conversation with Alex Lidow, CEO of EPC

Video: Alex Lidow discusses the latest trends in power electronics showcased at the PCIM conference, the evolution of GaN technology, and its impact on sustainability and energy costs. He also shares insights on overcoming technological and regulatory hurdles and forecasts future innovations that will shape the power electronics market.

Power Electronics News
June, 2024
Watch interview

阅读全文

氮化镓集成电路简化了人形机器人电机联合逆变器设计

氮化镓集成电路简化了人形机器人电机联合逆变器设计

电池供电的应用,如新一代机器人、无人机和电动工具,需要缩小空间并简化设计以控制电动机。优化尺寸和组件可以带来创新解决方案,在不牺牲效率和性能的前提下,在小空间内包含更多功能。EPC ePower™ Stage ICs 技术有助于简化和改进高级电机控制应用中的逆变器设计。

Bodo’s Power Systems
2024年6月
阅读文章

阅读全文

USB电源传输的进步:提高效率和高功率密度的GaN技术

USB电源传输的进步:提高效率和高功率密度的GaN技术

首个通用串行总线(USB)规范于1996年发布,旨在标准化计算和电信行业的电力传输和连接[1]。最初支持5V电源总线,电流高达5A(25W),最大数据传输速率为12 Mbit/s,由于电子设备的普及,USB已显著发展,导致对更高功率能力的需求。

Bodo’s Power Systems
2024年5月
阅读全文

阅读全文

使用EPC新款50V GaN FET设计更高功率密度的USB-C PD应用,尺寸仅为1.8 mm²

使用EPC新款50V GaN FET设计更高功率密度的USB-C PD应用,尺寸仅为1.8 mm²

EPC推出了50V、8.5mOhm的EPC2057 GaN FET,尺寸仅为1.5mm x 1.2mm,为USB-C PD应用提供了更高的功率密度。

加利福尼亚州埃尔塞贡多—2024年6月—EPC是增强型氮化镓(GaN) 功率FET和IC的全球领导者,推出了50V、8.5mΩ的EPC2057。该GaN FET专为满足高功率USB-C设备的不断发展需求而设计,包括消费电子、车载充电和电动出行设备。

阅读全文

EPC Showcases Cutting-Edge Power Electronics Solutions for Automotive, Robotics, Power Tools, Solar, and More at PCIM Europe 2024

EPC Showcases Cutting-Edge Power Electronics Solutions for Automotive, Robotics, Power Tools, Solar, and More at PCIM Europe 2024

EPC’s GaN Experts will be available during PCIM Europe, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.

EL SEGUNDO, Calif. — May 2024 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) FETs and ICs, is proud to announce its participation in PCIM Europe, the international leading exhibition and conference for Power Electronics, Intelligent Motion, Renewable Energy, and Energy Management. The event, held from 11 June to 13 June in Nuremburg, Germany, brings together industry experts and thought leaders to explore the latest advancements in power electronics and motion control.

阅读全文

中国国家知识产权局确认宜普电源转换公司氮化镓栅极半导体技术专利有效

中国国家知识产权局确认宜普电源转换公司氮化镓栅极半导体技术专利有效

埃尔塞贡多, 加利福尼亚州 - 2024年5月6日 - 宜普电源转换公司(Efficient Power Conversion Corporation, EPC,以下简称宜普公司)于今日宣布其名为“补偿门极MISFET及其制造方法”的专利(中国专利号ZL201080015425.X)被中国国家知识产权局确认有效,该专利广泛应用于增强型氮化镓半导体器件。

该决定于2024年4月30日作出。此前,中国国家知识产权局还曾于2024年4月2日作出决定,确认宜普公司的名为“增强型氮化镓高电子迁移率晶体管器件及其制备方法”的专利(中国专利号ZL201080015388.2)的核心权利维持有效。这两项专利的无效请求人均为英诺赛科(苏州)科技有限公司(以下简称英诺赛科公司)。

阅读全文

GaN FET让您实现高性能D类音频放大器

GaN FET让您实现高性能D类音频放大器

D类音频放大器参考设计(EPC9192)让模块化设计具有高功率和高效,从而可实现全定制、高性能的电路设计。

宜普电源转换公司(EPC)宣布推出EPC9192参考设计,可实现优越、紧凑型和高效的D类音频放大器,于接地参考、分离式双电源单端 (SE)设计中发挥200 V eGaN FET器件(EPC2307)的优势,在4Ω负载时,每声道输出功率达700 W。

阅读全文

国家知识产权局确认宜普公司功率器件专利的核心权利要求有效

国家知识产权局确认宜普公司功率器件专利的核心权利要求有效

根据国家知识产权局官网20204年4月2日的消息,宜普电源转换公司(Efficient Power Conversion Corporation, EPC,以下简称宜普公司)一件名为“增强型GaN高电子迁移率晶体管器件及其制备方法”的专利(专利号ZL201080015388.2)的核心权利要求6、9、10、13、14、17、18、22-26在无效程序(案件编号:4W116775)中被维持有效。该件专利的无效请求人是英诺赛科(苏州)科技有限公司(以下简称英诺赛科公司)。

According to the information on the official website of the China National Intellectual Property Administration (CNIPA) on April 2, 2024, the key claims 6, 9, 10, 13, 14, 17, 18 and 22-26 of the Chinese patent titled “Enhancement mode GaN HEMT device and method for fabricating the same” (Patent No. ZL201080015388.2) owned by Efficient Power Conversion Corp (“EPC”) have been maintained valid during an invalidation procedure (case number: 4W116775), which was requested by the petitioner Innoscience (Suzhou) Technology Co., Ltd. (“Innoscience”).

阅读全文

Cascade of Power

Cascade of Power

Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
Read article

阅读全文

氮化镓器件让您实现具成本效益的电动自行车、无人机和机器人

氮化镓器件让您实现具成本效益的电动自行车、无人机和机器人

基于氮化镓器件的逆变器参考设计(EPC9193)让您实现具有更高性能的电机系统,其续航里程更长、精度更高、扭矩更大,而且同时降低了系统的总成本。

宜普电源转换公司(EPC) 宣布推出 EPC9193,它是使用 EPC2619 eGaN® FET 的三相BLDC电机驱动逆变器,具有14 V~65 V的宽输入直流电压范围和两种配置,分别为标准和高电流版本:

阅读全文

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Forecasting System Reliability in Real-World Mission Profiles in EPC’s Phase 16 Report on GaN Reliability

Efficient Power Conversion (EPC) publishes Phase-16 Reliability Report adding new findings to the extensive knowledge base on GaN reliability and mission robustness.

EL SEGUNDO, Calif.— March 2024 — EPC announces the publication of its Phase-16 Reliability Report, documenting continued work using test-to-fail methodology and adding specific guidelines for overvoltage specifications and improving thermo-mechanical reliability.

阅读全文

Experts Weigh in on GaN & SiC at APEC 2024

Experts Weigh in on GaN & SiC at APEC 2024

In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.

The GaN speakers address two critical questions shaping the future of wide bandgap:

  1. The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
  2. Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
    • Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
    • Michael de Rooij, VP of applications engineering at EPC
    • Balu Balakrishnan, CEO of Power Integrations

View Video

阅读全文

EPC推出首款具有最低1 mOhm 导通电阻的GaN FET

EPC推出首款具有最低1 mOhm 导通电阻的GaN FET

EPC推出采用紧凑型QFN封装(3 mm x 5 mm)的100 V、1 mOhm GaN FET(EPC2361),助力DC/DC转换、快充、电机驱动和太阳能 MPPT等应用实现更高的功率密度。

2024年2月27日—全球增强型氮化镓(GaN)功率 FET 和 IC领域的领导者宜普电源转换公司(EPC)推出 100 V、1 mOhm EPC2361。这是市场上具有最低导通电阻的GaN FET,与EPC的上一代产品相比,其功率密度提高了一倍。

阅读全文

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
Read article

阅读全文

EPC GaN FET助力DC/DC转换器实现高功率密度和高效率基准

EPC GaN FET助力DC/DC转换器实现高功率密度和高效率基准

EPC GaN FET与Analog Devices驱动器和控制器相结合,为客户简化氮化镓基设计、提高其效率、降低散热成本、助力计算、工业和消费类应用的DC/DC转换器实现最高功率密度。

宜普电源转换公司(EPC )宣布推出采用 EPC GaN FET 和 Analog Devices, Inc. (ADI) 控制器的各种参考设计。

阅读全文

EPC GaN FET可在数纳秒内驱动激光二极管,实现75~231A脉冲电流、 支持先进的汽车自动化

EPC GaN FET可在数纳秒内驱动激光二极管,实现75~231A脉冲电流、 支持先进的汽车自动化

宜普电源转换公司(EPC)推出三款激光驱动器电路板,这些板采用了符合AEC-Q101认证标准、快速转换的GaN FET以实现具备卓越性能的激光雷达系统。

EPC推出三款评估板,分别是EPC9179EPC9181EPC9180,它采用75 A、125 A、231 A脉冲电流激光驱动器和通过车规级AEC-Q101认证的EPC GaN FET - EPC2252EPC2204AEPC2218A。它比前代氮化镓器件的体积小30%和更具成本效益。这些电路板专为长距离和短距离车载激光雷达系统而设计,通过可选的输入和输出值,加快评估氮化镓基解决方案。

阅读全文

宜普电源转换公司将在CES 2024展示基于氮化镓技术的消费电子应用场景– 电动出行、无人机、机器人及其他应用

宜普电源转换公司将在CES 2024展示基于氮化镓技术的消费电子应用场景–  电动出行、无人机、机器人及其他应用

EPC公司的氮化镓专家将在国际消费电子展(CES)上分享氮化镓技术如何增强消费电子产品的功能和性能

增强型氮化镓(eGaN®)FET和IC领域的全球领导者宜普电源转换公司(EPC)将在CES 2024展会展示其卓越的氮化镓技术如何为消费电子产品在功能和性能方面做出贡献 ,包括实现更高效率、更小尺寸和更低成本的解决方案。

阅读全文

Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
Read article

阅读全文
1345678910Last