Efficient Energy Technology GmbH(EET)位于奥地利，是设计和生产创新、用于阳台的小型发电厂的先驱。EET公司选用了宜普电源转换公司(EPC)的增强型氮化镓(eGaN^®)功率晶体管（EPC2204）, 用于其新型SolMate^®绿色太阳能阳台产品。EPC2204在低R_DS(on)和低C_OSS之间实现了最佳折衷，这对于要求严格的硬开关应用至关重要，同时在紧凑的封装中实现100 V的漏-源击穿电压。这种紧凑型设计显着缩小了PCB的尺寸，保持较小的电流环路和最大限度地减少EMI。

EET公司结合了EPC的氮化镓器件和其SolMate MPPT充电转换器，以实现多种优势：效率损失减半和整体效率从96%提高到98%。转换器的体积缩减了70%、BOM和制造成本降低了 20%而同时降低了对散热的要求。此外，由于开关频率提高了10倍，因此无需使用易于引发问题的电解电容器，从而延长了转换器的使用寿命。

与采用传统硅器件的转换器相比，采用氮化镓基高电子迁移率晶体管 (HEMT) 具有许多材料和性能优势，已广泛用于消费和工业用功率转换领域。氮化镓器件在更高的开关频率下提高了功率转换效率，进而实现更低的系统成本和更高的功率密度。随着功率密度的增加，散热分析和热建模变得至关重要。我们将在本文分享EPC的热量计算器。 EPC公司制造增强型 GaN HEMT 和集成电路，例如支持多种转换器的半桥器件。

Power Electronics News
2023年11月
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Space exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior radiation tolerance and unmatched electrical performance compared to traditional silicon MOSFETs. In this article, we delve into the reasons why GaN power devices are the ultimate choice for power conversion applications in space and how their resistance to radiation makes them an extremely robust solution for space missions.

Components in Electronics
October 2023
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LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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基于氮化镓器件的EPC9194逆变器参考设计显着提高了电机驱动系统的效率、扭矩而同时使得单位重量功率（比功率）增加了一倍以上。该逆变器非常微型，可集成到电机外壳中，从而实现最低的电磁干扰、最高的密度和最輕的重量。

宜普电源转换公司宣布推出三相BLDC电机驱动逆变器参考设计(EPC9194)。它的工作输入电源电压范围为 14V ~60V，可提供高达60 A_pk(40 A_RMS)的输出电流。此电压范围和功率使该解决方案非常适合用于各种三相BLDC电机驱动器，包括电动自行车、电动滑板车、无人机、机器人和直流伺服电机。

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

EE Times Europe
October 2023
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影响氮化镓技术在各种电源管理应用中的快速渗透普及有哪些因素？在本文中，我们将深入探讨在过去 13 年中我司访问过、已投入批量生产的客户的反馈。

Power Electronics News
2023 年 10 月
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由电池供电的工业车辆，例如叉车、手动搬运车或仓库内的自动汽车，需要大电流逆变器来驱动电机。 氮化镓技术有助于提高这些应用中的功效和简化逆变器的设计。

Bodo System
2023 年 10 月
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宜普电源转换公司首席执行官兼共同创办人Alex Lidow表示，GaN的成本竞争力亦与Si MOSFET并驾齐驱，潜在爆发力更有过之而无不及，目前最关键就是得重塑诸多研究者的老旧观念，认为GaN昂贵到碰不得。GaN的技术正迎来转捩点，在先进运算、车用电子、太空电子及消费电子等新型应用设计多数采GaN技术，而非Si MOSFET……

DIGITIMES Asia
2023年9月
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宜普电源转换公司首席执行官兼共同创办人Alex Lidow接受DIGITIMES专访，提到GaN主要会被应用在650V及以下市场。反之碳化硅则是主导650V以上的市场，它可望取代硅基绝缘栅极双极性晶体管。宜普也在开发对速度及尺寸特性极为要求的400V以下市场。且致力于制造比Si功率元件拥有更高性能、更具成本竞争力的GaN元件。

DIGITIMES Asia
2023年9月
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Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
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在功率转换、电机驱动和激光雷达等应用中，15 V至350 V范围内的氮化镓（GaN）异质结场效应功率晶体管显示出比硅具有显著优势的，无论是在效率、尺寸、速度和成本方面。这些优势源于关键电场的数量级比硅高出一个数量级，具体而言，尤其是高三倍的带隙方面有3倍的优势，和高1.3倍的电子迁移率方面有1.3倍的优势。

Bodo’s Power Systems
2023年9月
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As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
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EPC9159是一款1 kW、48 V/12 V的LLC转换器，占板面积仅为17.5 mm x 22.8 mm，可实现5130 W/in³最先进的功率密度。

宜普电源转换公司(EPC)宣布推出EPC9159参考设计。这是一款48 V/12 V的LLC转换器，专为高功率密度48 V服务器电源和DC/DC转换器而设计。该参考设计可在17.5 mm x 22.8 mm的微小封装内提供高达1 kW的功率，其功率密度为5130 W/in³。这是在初级侧和次级侧电路中采用于高开关频率工作的氮化镓(GaN)功率器件才可以实现的。

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

Electronics Weekly
August, 2023
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GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.

Power Electronics News
August, 2023
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Microinverters and power optimizers are widely utilized in modern solar panels to maximize energy efficiency and conversion. Such topologies and implementations usually require a minimum of 25 years of lifetime, which is becoming a critical challenge for market adoption. Low-voltage gallium nitride (GaN) power devices (VDS rating < 200 V) are a promising solution and are being used extensively by an increasing number of solar manufacturers.

In this article, a test-to-fail approach is adopted and applied to investigate the intrinsic underlying wear-out mechanisms of GaN transistors. The study enables the development of physics-based lifetime models that can accurately project the lifetimes under the unique demands of various mission profiles in solar applications.

How2Power
August, 2023
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As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low R_DS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
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汽车电子在过去30年内经历了几个时代的演变。 从主要采用机械或发动机驱动系统的纯内燃机 (ICE)，到添加电力动力的轻度混合动力 (MHEV)，再到全电池电动汽车 (BEV)应用。 在这三个时代中，用于转换和分配电力的架构甚至基本半导体元件都发生了重大的变化。 本文讨论了这个进化过程和对将来进化的方向做出了一些推测。

Power Systems Design
2023年8月
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In this article, Renesas Electronics explains how using a discreet GaN based power supply in the ISLVERSALDEMO2Z reference design for the core offers several advantages for power management in space avionics systems.

Power Electronics News
July, 2023
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