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Semiconductor firms have announced $100.6 billion in mergers and acquisitions this year. Chip makers have long used acquisitions to obtain new technology. But many recent deals resemble consolidation waves in older industries, motivated mainly by trimming costs in areas like manufacturing, sales and engineering.
Wall Street Journal
October 18, 2015
By: Don Clark
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根据Transparency Market Research公司的全新调查报告指出,全球氮化镓半导体器件市场在2012年的营销额为三亿七千九百八十二万美元,并估计在2019年底该市场的营销达二十二亿零三百七十三万美元。根据2013年至2019的市场预测,该氮化镓半导体器件市场的年均复合增长率将达24.6%。
杂志:Industry Today
2015年10月14日
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The combination of lower on-resistance, faster switching speeds, lower thermal impedance, and smaller physical size of eGaN FETs continues to raise the bar for power transistor performance. As GaN technology matures, not only does the performance of these transistors rapidly improve, but significant reductions in cost are also realized. Not only will GaN devices continue to enable new applications, they will replace silicon power transistors in cost-sensitive applications as well. As a matter of fact, the first signs of this happening are already here.
Power Systems Design
By: Johan Strydom, Ph.D.
September 26, 2015
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EPC2037增强型氮化镓功率晶体管(100 V、1 A、550 mΩ)由一个数字驱动器直接驱动,于采用D类及E类放大器拓扑的无线充电应用中可以实现高频开关及特别优越的性能。
宜普电源转换公司(www.epc-co.com.cn )推出增强型氮化镓功率晶体管(eGaN® FET)系列的最新成员 -- EPC2037。
EPC2037(100 VDS、1 A)非常小型(1.82 mm2)及在栅极上施加5 V电压时的最大导通阻抗为 550 mΩ。 由于它具备超高开关频率、低导通阻抗值、异常低QG值及采用超小型封装,因此它在电源转换系统具备高性能优势。EPC2037由一个数字逻辑集成电路直接驱动,因此不需额外及高成本的驱动器集成电路。
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In recent years, the acceleration predicted by Moore’s law has slipped. However, silicon could give way to new materials for making faster and smaller transistors.
New York Times
By: John Markoff
September 26, 2015
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电子工程界后裔Alex Lidow认为技术业界的必用材料需要改变。六十岁的Lidow现为宜普电源转换公司的首席执行官,是技术业界大力鼓吹利用氮化镓材料制造晶体管及半导体的提倡者。技术业界一直以来依靠采用传统的硅材料制造晶体管及半导体。这是一门非常获利的生意,根据代表于美国设立的公司的SIA估计,去年全球半导体业界的营收达三千三百五十八亿美元。
Fast Company
2015年9月
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宜普公司的《DC/DC转换手册》与工程师分享如何在数据通信设备及其它功率转换应用中利用氮化镓(GaN)功率晶体管提高效率及功率密度。
现今世界对信息的需求史无前例地快速增长,而社会对通信、计算及下载技术的渴求进一步驱使我们对信息的需求量上升。新兴技术诸如云端运算及物联网的出现,加上全球每分钟估计有高达300小时的录像被上载至YouTube平台,可见要求更多、更快速的信息存取的趨势不会慢下来。这个挑战推动了我们编撰这本实用工程知识手册--《DC/DC转换-《氮化镓晶体管—高效功率转换器件》的增刊 》。
本书阐述功率转换系统如何持续改善,从而跟上正在快速提升的运算能力的发展步伐,以及应对社会对高效数据中心的需求。此外,本书的焦点是如何发挥高效氮化镓技术并逐步分析如何利用氮化镓器件设计出高效的功率转换解决方案。该分析对用于功率转换系统中的传统先进硅功率晶体管和氮化镓晶体管进行比较。
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双路增强型120 V、60 mΩ氮化镓集成电路(EPC2110)可实现超高频开关,从而推动采用E类放大器拓扑的无线电源传送应用实现优越性能。
宜普电源转换公司(www.epc-co.com.cn)推出增强型氮化镓IC系列的最新成员-- EPC2110。
EPC2110是一种具有120 VDS、20 A的双路共源极器件,它采用非常纤薄的封装(1.35 mm x 1.35 mm),于栅极施加5 V电压时的最高RDS(on) 为 60 mΩ。由于EPC2110具备超高开关频率、超低RDS(on)、异常低的QG及采用非常纤薄的封装,因此这种氮化镓IC可以实现高性能。
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The company Alex founded in 2007, called Efficient Power Conversion, or EPC, is wholly dedicated to the task of putting GaN in the forefront for use in a variety of things. Wireless power transmission, Class D audio amplifiers, (using a small circuit board, this would produce less heat, and extend battery life on portable systems); and pulsed lasers, or LiDAR (Light Distancing and Ranging), designed to quickly create 3D images useful in mapping and meteorology.
By: Bruce Rogers
Forbes
September 3, 2015
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电力的成本反映了社会经济是否发展良好。这是因为具备成本效益的电力可提高生活质素、推动全新应用的出现及业界的健康发展。氮化镓器件的出现可替代备受尊敬但日益陈旧的硅技术及解决方案,使得我们可满足社会对更高效电源的要求并带领业界的发展。
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采用无线电源充电的产品不断增多及各种移动应用采用多种不同的无线电源标准使消费者容易混淆,而且阻碍无线电源应用的普及。本章讨论可支持多种模式并工作在各种高(6.78 MHz)低(100 kHz - 315 kHz)频率的放大器拓扑。
EEWeb - Wireless & RF 杂志
2015年8月
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The trend for electronics is to continually push towards miniaturization while increasing performance. With silicon MOSFET technology fast approaching its theoretical limit, enhancement mode gallium nitride (eGaN®) FETs from EPC have emerged to offer a step change improvement in power FET switching performance, enabling next generation power density possibilities by decreasing size and boosting efficiency. This article will explore the recommended layout techniques required to fully extract the benefits of EPC’s eGaN FETs.
By: Ivan Chan & David Reusch, Ph.D.
EEWeb –Modern Printed Circuits
August, 2015
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全新eGaN® FET (EPC2039)具备优越性能、大功率及采用超小型封装的优势,其价格也可以支付得起。
宜普电源转换公司宣布推出EPC2039功率晶体管。该产品是一种具备高功率密度的增强型氮化镓((eGaN®)功率晶体管,其尺寸只是1.82 mm2、80 VDS、6.8 A及在栅极上施加5 V电压时的最大阻抗为 22 mΩ。 由于它在超小型封装内具备高开关性能,因此它在电源转换系统具备高性能优势。
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氮化镓功率晶体管 -- EPC2106为功率系统设计师提供的解决方案可以在2 MHz以上频率开关,从而不会干扰AM频段及降低过滤成本,因此是具备低失真性能的D类音频放大器的理想选择。
宜普电源转换公司宣布推出单片半桥式增强型氮化镓晶体管 --EPC2106。通过集成两个eGaN®功率场效应晶体管而成为一个集成电路可以去除互感及PCB板上器件之间所需的间隙空间,从而提高效率(尤其是在更高频时)及提高功率密度而同时降低终端用户的功率转换系统的组装成本。
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Wireless charging may have a standards battle to contend with, but there’s also a major a measurement problem. The quest for convenient living and energy conservation poses a ‘Ying/Yang’ dilemma living in the age of electronics. This is certainly the case with wireless power transfer technology. This rapidly emerging technology has the promise of “cutting the cord” and displacing the need for AC/DC wall adapters and perhaps eventually wall sockets. The question now is; will wireless power increase our carbon footprint by being less efficient than the traditional plug-in AC/DC wall adapters?” Are some wireless systems more efficient than others? These are two fundamental questions that need to be examined in an energy conscious world governed by energy efficient standards.
EETimes
August 4, 2015
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一种全新产品的面世有可能使检查大肠中的癌细胞好像吞下药丸般这么容易。这种技术是基于一种由宜普电源转换公司(EPC)开发的全新晶片,该晶片并没有使用硅技术 -- 它使用了氮化镓(GaN)技术。宜普公司的首席执行官Alex Lidow对Quartz谈及他们公司的晶片可以耐受Check Cap内的各个感应器所需的高电压。
Quartz
2015年7月30日
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由于PAPR比率在5G技术中会变差,氮化镓(eGaN)技术被认为是支持5G技术的基站结构在功效方面的最重要解决方案,而氮化镓功率晶体管已经实现了包络跟踪应用,我们并预期在未来的3至5年之间,当氮化镓技术继续发展,市场将会有更多的新兴应用陆续出现。
EDN
Steve Taranovich
2015年7月17日
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EPC garners the attention of MIT Technology Review with its new products targeted for wireless charging applications. Recognizing EPC as a catalyst for jump-starting the market for wireless power systems, the author highlights the need for universally accepted technology standards. He reinforces his position quoting Alex Lidow saying that “…convenience, cost, and efficiency” are all factors needed for broad adoption of any standard…
MIT Technology Review
July 15, 2015
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全新EPC2107及EPC2108 eGaN®功率集成电路包含单片半桥式器件及集成式自举功能,专为符合无线充电联盟(A4WP)第二及第三级规范的解决方案而设。此外,为了让客户容易对氮化镓元件进行评估,我们也提供开发板及包含发射器及接收器的无线电源传送解决方案。
宜普电源转换公司(EPC)宣布推出内含集成式自举功能的场效应晶体管的eGaN半桥功率集成电路 EPC2107(100 V)及EPC2108(60 V)。该集成电路去除了由栅极驱动器所引致的反向恢复损耗,也不需高侧箝位。这是首次在eGaN功率电路中集成了一个自举场效应晶体管。
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Consumers want to be able to go wirelessly where they want, when they want. They want televisions to be seamlessly synchronized with tablets, phones, laptops, and automobiles. They want all their communication, information, and entertainment to be available immediately, with high resolution, all the time. Recently the automobile industry has caught on to this trend and has begun to show its vision of the future for the fully mobile lifestyle.
Consumers also do not want to worry about running out of battery life – no more looking for an open outlet at the airport. This untethered life is the Mobility Imperative and it is driving innovation in consumer products, which in turn, is pushing the limits of silicon-based semiconductor technology.
Nikkei Business Publications
July 10, 2015
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