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Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

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GaN for High Density Servers

GaN for High Density Servers

Gallium nitride (GaN) devices offer performance in a small form factor, increasing the efficiency, and reducing the system cost for 48 V power conversion applications. They have been adopted in high volumes in high density computing, as well as many new automotive power system designs.

Electronic Specifier
February, 2021
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The 48 V Revolution: Why GaN Plus Digital Control for Ultra-thin Laptops

The 48 V Revolution: Why GaN Plus Digital Control for Ultra-thin Laptops

This article discusses how GaN-based solutions coupled with digital control increase efficiency, shrink the size, and reduce system costs for high density computing applications like ultra-thin laptops and high-end gaming systems. As computers, displays, smartphones and other consumer electronics systems become thinner and more powerful over the past decade, there is increasing demand for addressing the challenge of thinner solutions while extracting more power out of limited space. To address this challenge, the comparative advantages of various non-isolated DC-DC step-down topologies for ultra-thin 48 V – 20 V power solutions that are designed to fit inside a notebook computer or an ultra-thin display are examined.

Power Electronics News
January, 2021
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宜普电源转换公司(EPC)推出具有最优越的同步整流性能和极具成本效益的170 V eGaN FET,抢占高端服务器和消费类电源应用市场

宜普电源转换公司(EPC)推出具有最优越的同步整流性能和极具成本效益的170 V eGaN FET,抢占高端服务器和消费类电源应用市场

宜普电源转换公司(EPC)推出170 V、6.8毫欧的EPC2059氮化镓场效应晶体管(eGaN®FET),相比目前用于高性能48 V同步整流的器件,EPC为设计工程师提供更小型化、更高效、更可靠且成本更低的器件。

宜普电源转换公司是增强型硅基氮化镓(eGaN)功率场效应晶体管和集成电路的全球领先供应商,旨在提高产品性能而同时降低可发货的氮化镓晶体管的成本,推出EPC2059(6.8 mΩ、170 V)氮化镓场效应晶体管,是100 V ~ 200 V解决方案系列的最新产品,该系列适用于广阔的功率级并备有不同价格的器件可供选择,满足市场对48 V ~ 56 V服务器和数据中心产品,以及一系列用于高端计算的消费类电源应用(包括游戏PC,LCD / LED电视和LED照明)不断增长的需求。

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采用氮化镓技术的功率转换应用

采用氮化镓技术的功率转换应用

氮化镓(GaN)技术已实现重大改进,而且它极具成本效益,可以替代MOSFET器件。 从2017年开始,采用氮化镓器件的48 V DC/D转换器开始成为市场上重要的应用。 各种拓扑诸如多相和多级降压转换器,实现具备更高效率的全新解决方案,可以满足IT和车载市场的能源需求。

Power Electronics News
2020年11月
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eGaN FET实现具有98%效率、250 W、48 V DC/DC解决方案, 用于超薄且高密度的计算应用

eGaN FET实现具有98%效率、250 W、48 V DC/DC解决方案, 用于超薄且高密度的计算应用

基于宜普电源转换公司(EPC)超高效eGaN® FET的两种高功率密度DC/DC转换器,推动超薄笔记本电脑、显示器、高端游戏系统和其它纤薄型消费电子产品实现高效解决方案

宜普电源转换公司(EPC)宣布推出用于48 V DC/DC转换的EPC9148EPC9153演示板。 EPC9153是一款250 W超薄电源模块,采用简单且低成本的同步降压配置,峰值效率高达98.2%,其元件的最大厚度为6.5 毫米。EPC9148使用多电平拓扑结构,元件的最大厚度小于4 毫米,峰值效率为98%。

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Power Product News from ‘Virtual APEC’

Power Product News from ‘Virtual APEC’

Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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学习利用氮化镓(GaN)技术设计最先进的人工智能、机械人、无人机、 全自动驾驶汽车及高音质音频系统

学习利用氮化镓(GaN)技术设计最先进的人工智能、机械人、无人机、 全自动驾驶汽车及高音质音频系统

EPC公司进一步更新了其广受欢迎的教育视频播客系列,上载了6个视频,针对器件可靠性及基于氮化镓场效应晶体管及集成电路的各种先进应用,包括面向人工智能的高功率密度运算应用,面向机械人、无人机及车载应用的激光雷达系统,以及D类放音频放大器。

宜普电源转换公司(EPC)更新了其广受欢迎的“如何使用氮化镓器件”的视频播客系列。刚刚上载的六个视频主要分享实用范例,目的是帮助设计师利用氮化镓技术设计面向人工智能服务器及超薄笔记本电脑的先进DC/DC转换器、面向机械人、无人机及全自动驾驶汽车的激光雷达系统,以及实现有可能是具有最高音质的音频系统

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功率半导体战争开始了

功率半导体战争开始了

氮化镓(GaN)及碳化硅(SiC)器件的价格下调,对客户而言,更为吸引。多家供应商推出基于氮化镓及碳化硅的功率半导体,摩拳擦掌,正在爆发新一轮的半导体大战,全速进攻传统硅基器件的市场份额。

Semiconductor Engineering
2019年10月
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DC-DC Conversion for 48 V – 12 V Automotive Applications

DC-DC Conversion for 48 V – 12 V Automotive Applications

GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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EPC于欧洲PCIM展会展示基于eGaN 技术、面向汽车、计算机及其他多种应用、具高功率密度的高效DC/DC功率转换

EPC于欧洲PCIM展会展示基于eGaN 技术、面向汽车、计算机及其他多种应用、具高功率密度的高效DC/DC功率转换

宜普电源转换公司(EPC)将于欧洲PCIM展会现场演示优越的氮化镓技术如何提升多种应用所需的电源供电效率,包括运算、通信及运输行业。

EPC团队将于5月7日至9日在德国的Nuremberg、欧洲PCIM展览及研讨会的会场,进行7场关于氮化镓(GaN® )技术及应用的演讲,并于7号馆、335展览摊位与工程师会面并分享最新的、基于eGaN FET及集成电路的终端客户产品。

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车规级eGaN FET使得激光雷达系统看到更清晰、更高效, 并且降低48 V车用功率系统的成本

车规级eGaN FET使得激光雷达系统看到更清晰、更高效, 并且降低48 V车用功率系统的成本

宜普电源转换公司(EPC)进一步扩大车规级氮化镓产品系列 – 再多两个产品成功通过国际汽车电子协会所制定的AEC Q101分立器件应力测试认证。

宜普电源转换公司(EPC)宣布再多两个车用氮化镓(eGaN)器件成功通过AEC Q101测试认证,可在车用及其它严峻环境支持多种全新应用。EPC2206EPC2212 是采用晶圆级芯片规模封装(WLCS) 、分别是80 VDS 和100 VDS的分立晶体管。

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宜普电源转换公司(EPC)于CES 2019展览展示 基于GaN技术的家居无线电源系统及针对全自动驾驶汽车的高分辨率激光雷达技术

宜普电源转换公司(EPC)于CES 2019展览展示 基于GaN技术的家居无线电源系统及针对全自动驾驶汽车的高分辨率激光雷达技术

EPC公司将于国际消费电子展CES® 2019 的hospitality suite展示基于氮化镓(GaN)器件的家居无线电源系统及应用于全自动驾驶汽车的、领先业界的激光雷达系统。

EPC公司将于2019年1月8日至11日在美国拉斯维加斯举行的国际消费电子展(CES 2019展示eGaN®技术如何实现两种改变业界游戏规则的消费电子应用 -- 分别是无线电源及应用于全自动驾驶汽车的激光雷达(LiDAR)。

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Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

The Power and Evolution of GaN – Part 2 of 6 part series

Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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面向48 V转到1-2 V/10 A的应用,采用基于氮化镓器件的 VRM混合式转换器可实现 95%效率

面向48 V转到1-2 V/10 A的应用,采用基于氮化镓器件的 VRM混合式转换器可实现 95%效率

在48 V总线架构出现后,我们可采用全新、基于氮化镓(GaN)晶体管的混合式转换器,以实现超过95%峰值效率及225 W/in3 功率密度。对于节能的数据中心来说,轻负载效率非常重要。基于氮化镓晶体管的转换器在转换至20%负载时,可保持高于90%的效率。

PowerPulse
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宜普电源转换公司(EPC)推出100 V、尺寸比等效硅器件小30倍及工作在500 kHz频率时可实现97%效率的氮化镓(eGaN)功率晶体管

宜普电源转换公司(EPC)推出100 V、尺寸比等效硅器件小30倍及工作在500 kHz频率时可实现97%效率的氮化镓(eGaN)功率晶体管

专为功率系统设计师而设的EPC2051功率晶体管是一种100 V、25 mΩ并采用超小型芯片级封装的晶体管,可实现37 A脉冲输出电流。EPC2051是多种应用的理想器件,包括48 V功率转换器、激光雷达及LED照明等应用。

宜普电源转换公司(EPC)宣布推出100 V的EPC2051氮化镓场效应晶体管,其占板面积只是1.1平方毫米、最大导通阻抗(RDS(on)))为25 mΩ及脉冲输出电流高达37 A 以支持高效功率转换。

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Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018

Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018

In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

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