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宜普公司专家将于三个业界技术研讨会演讲:第十三届慕尼黑上海电子展 - 国际电力电子创新论坛、IIC电子工程盛会 - 2014年春季论坛及台湾宽能隙电力电子研发联盟举办的宽能隙电力电子国际研讨会。
硅基增强型功率氮化镓(eGaN®)功率晶体管之全球领导厂商宜普电源转换公司将于亚太区业界技术研讨会进行三场技术演讲。
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由于德国航空太空中心的机械人及机械电子研究院(Robotics and Mechatronics Institute )对改善传感器及功率电子的兴趣很大,我们利用开发全新机械人的机会来评估宜普电源转换公司(EPC)的全新增强型氮化镓场效应晶体管技术并与我们目前最优秀的逆变器设计进行比较。
杂志 :Bodo’s Power Systems
作者:德国航空太空中心 (DLR) Robin Gruber
日期:2014年3月
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于2014年IEEE的 APEC功率电力电子业界研讨会中,宜普电源转换公司的应用技术专家将分享氮化镓场效应晶体管技术如何于应用中比硅功率MOSFET器件优胜。
硅基增强型功率氮化镓场效应晶体管之全球领导厂商宜普电源转换公司将于2014年APEC技术研讨会以应用为主题进行三场技术演讲,与参与者分享高频谐振转换器及高频、硬开关功率转换器设计。研讨会将于3月16日至20日在德克萨斯州的Fort Worth举行。
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EPC8010 100 V gallium nitride FET is optimized for high frequency applications with positive gain into the 3 GHz range.
EL SEGUNDO, Calif. – January 2014 – Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN®) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor. Sold in die form, the EPC8010 is a mere 1.75 mm2 with 100 VDS. Optimized for high speed switching, the EPC8010 has a maximum RDS(on) of 160 milliohms and input gate charge in the hundreds of pico-coulombs.
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The quality of sound reproduced by an audio amplifier, measured by critical performance parameters such as THD (Total Harmonic Distortion), damping factor (DF), and T-IMD (Inter-modulation Distortion), is influenced by the characteristics of the switching transistors used. Class-D audio amplifiers typically use power MOSFETs, however, lower conduction losses, faster switching speed, and zero reverse recovery losses provided by enhancement-mode GaN (eGaN) FETs enable a significant increase in the sonic quality, and higher efficiency that can eliminate heatsinks. The result is a system with better sound quality in a smaller form factor that can be built at a lower cost.
EEWeb
By: Alex Lidow
February, 2014
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Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.
Power Pulse
By: Alex Lidow
February, 2014
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EPC9013开发板内含100 V氮化镓场效应晶体管(eGaN®FET),是一种35 A最大输出电流并采用四个半桥式配置的电路设计及配备一个板载栅极驱动器。
宜普电源转换公司(EPC)宣布推出全新开发板 EPC9013 ,内含100 V增强型氮化镓场效应晶体管(EPC2001),使用四个半桥式并联配置及一个板载栅极驱动器,以降压模式工作在达35 A最大输出电流。这种创新设计可增加输出功率之同时并不会降低效率。
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本章展示氮化镓场效应晶体管如何推动具高度谐振、松散耦合性、工作在6.78 MHz ISM频带的无线电源传送技术,实现高效无线能源传送,并与工程师分享使用电压模式D类及E类方法的范例。
EEWeb
作者:Alex Lidow
日期:2014年1月
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Examining new products released by: Texas Instruments, Analog Devices, Linear Technology, Maxim-Integrated, Intersil, Fairchild, EPC, and IR, Don Tuite finds a common thread: the companies’ products are doing the heavy lifting for their customers.
Electronic Design
Don Tuite
January 6, 2014
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