从2010年开始，自硅基氮化镓（GaN）晶体管商用化后，低压氮化镓晶体管推动了很多全新应用的发展。氮化镓器件具备超快速开关，推动全新市场诸如激光雷达、包络跟踪及无线电源市场的出现。这些全新应用进一步实现更强大的供应链、低制造成本及器件前所未有的高可靠性。这些优势使得比较保守的设计工程师在DC/DC转换器、AC/DC转换器及车载等各种应用开始对氮化镓器件进行评估。在本文章系列，我们将讨论多种发挥氮化镓器件优势的应用，实现最终产品差异化的竞争优势。首先，我们会探讨是什么因素加快了氮化镓器件的普及。

Power Systems Design
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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

宜普电源转换公司（EPC）的两个车规级氮化镓晶体管（EPC2202及EPC2203）成功通过了国际汽车电子协会所制定的AEC Q101分立器件应力测试认证，推动一系列面向车用及其它严峻环境的应用的发展。

宜普电源转换公司（EPC）的第一批通过国际汽车电子协会所制定的AEC Q101分立器件应力测试认证的氮化镓场效应晶体管（EPC2202及EPC2203），荣获《今日电子》杂志与21IC中国电子网颁发2018年度“Top-10电源产品奖—技术突破奖”。该奖项在2018年9月13日于北京举行的21iC电源技术研讨会上颁发。

专为功率系统设计师而设的EPC2051功率晶体管是一种100 V、25 mΩ并采用超小型芯片级封装的晶体管，可实现37 A脉冲输出电流。EPC2051是多种应用的理想器件，包括48 V功率转换器、激光雷达及LED照明等应用。

宜普电源转换公司（EPC）宣布推出100 V的EPC2051氮化镓场效应晶体管，其占板面积只是1.1平方毫米、最大导通阻抗(R_DS(on)))为25 mΩ及脉冲输出电流高达37 A 以支持高效功率转换。

Spirit公司的Marti McCurdy及EPC公司首席执行官Alex Lidow分享氮化镓器件如何在性能及成本方面比硅器件优越，以及分享全球领导厂商如何与EPC公司合作，利用氮化镓器件的优势，开发出他们新一代的技术。

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eGaN FET（及目前的集成电路）之可以应用于全自动车辆的激光雷达系统，以及全自动电动赛车，是因为这些器件可以实现高很多的分辨率（由于具备超短激光脉冲）、更快速的图像速度（由于短激光脉冲），及可以准确地看得更远（由于在超高电流时可以实现快速激光脉冲）。

Planet Analog
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硅基增强型氮化镓场效应晶体管及集成电路的领先供应商宜普电源转换公司（EPC）于中国上海与功率管理工程师会面并讨论关于1）针对大于30 W功率高度谐振无线功率接收器、内建同步整流FET的E类整流器； 及2）采用eGaN^® FET、120 A、少于10纳秒脉冲及占板面积小于3平方厘米的千瓦级激光驱动器。

我们诚挚邀请工程师莅临中国上海，出席我们于2018年6月26日（星期二）上午10时至10时50分、在1099号国展路上海世博展览馆1层2号展馆内举行的PCIM Asia 2018研讨会（电力转换与智能运动研讨会）的演讲。

For LiDAR systems to meet ever-higher performance specs, they must perform fast switching of high-current pulses, which is where a gallium-nitride power switch can step in to help.

Electronic Design
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LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN^® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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Superior characteristics of eGaN^® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.

Spirit Electronics now provides distribution support to assist customers in adopting eGaN^® FETs and ICs for leading-edge power conversion systems in the defense and aerospace market.

EL SEGUNDO, Calif.— May 2018 — To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments.  Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the Department of Defense, aerospace, and telecommunication industries.  

Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2018 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — May 2018 — The EPC team will be delivering five technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2018 in Nuremberg, Germany from June 5^th through the 7^th. In addition, in Hall 7, Stand 539, the company will exhibit its latest eGaN^® FETs and ICs in customers’ end products that are enabled by eGaN technology.

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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EPC公司的“2018年中国路演”继续展开行程,于5月17至19日在西安举行的首次亚太区WiPDA研讨会中与工程师分享最新的氮化镓技术发展。

宜普电源转换公司“2018年中国路演”于3月14日在深圳举行的首届AirFuel无线充电大会暨开发者论坛出发，继而由其首席执行官兼共同创办人Alex Lidow于3月15日在上海由中国SEMI举办的功率及功率暨化合物半导体论坛作开幕专题演讲。路演的下一站是于5月17-19日在西安举行的首次亚太区WiPDA论坛，与工程师作技术交流并展示其最新的eGaN®器件。之后，我们将于6月26–28日在上海举行的亚太区PCIM会议演讲，与工程师分享采用氮化镓器件的无线电源传送应用和面向全自动汽车的激光雷达系统。

宜普电源转换公司（EPC）的两个车用氮化镓晶体管成功通过了国际汽车电子协会所制定的AEC Q101分立器件应力测试认证。

宜普电源转换公司宣布其两个车用氮化镓(eGaN^®)器件成功通过AEC Q101测试认证，可在车用及其它严峻环境实现多种全新应用。EPC2202及EPC2203是采用晶圆级芯片规模封装（WLCS） 、80 V_DS 的分立晶体管。面向严峻的车用环境的多个分立晶体管及集成电路也将在不久的未来推出。

EPC2050为电力系统设计师提供了一款350伏、65毫欧、26安培的功率晶体管，采用极小的芯片级封装。 这些新设备非常适合多级转换器、电动车充电、太阳能逆变器和电机驱动等应用。

加州埃尔塞贡多 — 2018年4月 — 高效电力转换公司宣布推出EPC2050，一款350伏的氮化镓晶体管，最大R_DS(on)为65毫欧，脉冲输出电流为26安培。应用包括电动车充电、太阳能逆变器、电机驱动以及多级转换器配置，例如用于电信或服务器电源的3级、400伏输入至48伏输出的LLC转换器。

EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

Wireless power charging was a big point of discussion with a number of different solutions on the APEC 2018 exhibit floor. The following wireless charging solutions had unique aspects in their strategies; let’s take a look at what I saw over the last few days.

EDN Network
By Steve Taranovich
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