GaN技术杂谈

I have yet to meet someone who likes power cords.

Take for example Keith. In figure 1 is a photo of all the power-related accessories Keith lugs around in his backpack to make certain he will be able to run his phone, tablet, and computer wherever he goes. What Keith and others may not realize is that the technology is available that can eliminate every one of these cords – today! So, why is it taking so long for wireless power solutions to become a household technology?

Certainly, wireless charging is not a new topic having been talked about for quite a while. But now, with a recently developed innovative approach to the design of transmission and receiver antennae (coils), ubiquitous wireless power is ready to be incorporated into our daily lives throughout furniture, walls, and floors to efficiently and economically power all the gadgets we need for our electronic lives.

This post was originally published May 26, 2017 on the PowerPulse.net web site . Learn more about eGaN technology and EPC GaN solutions for 48 V to Point-of-Load.

During last week’s PCIM Europe event in Nuremberg, Germany, direct 48V-to-1V power conversion architectures were a significant topic, mostly outside of the exhibit floor. Vicor was quietly showing its latest generation of 48V direct-to-chip power components. Ericsson Power Modules and Efficient Power Conversion were holding invitation-only meetings where future designs of 48V direct to load power conversion architectures were the focus of the discussions. By the end of 2017, several vendors are expected to be offering dc-dc converters delivering 48V-to-1V direct conversion.

This post was originally published on the How2Power web site. Learn more about eGaN technology here and EPC GaN solutions for wireless power here.

Wireless charging is not a new topic—it has been talked about for quite a while. Unfortunately, it has not seen widespread consumer acceptance. But, with a recently developed innovative approach to the design of transmission coils, wireless power is ready for widespread application.

This post was originally published on Velodyne LiDAR’s “360” Blog. Learn more about eGaN technology here and EPC GaN solutions for LiDAR here.

Have you ever been driving at night—perhaps on a twisty two-lane highway—when the headlights of an oncoming car seemingly “crash” into your retinas? Blue-tinged LED beams leap out from behind a curve, or crest over a hillside, and for an instant it feels like you may have gone blind. Your vision erupts with a painful jolt of white. You squint through patchy discolorations trying to locate the lane lines. A quick flip of your high beams results in an even brighter display from the oncoming car. And now there are two drivers swerving past one another who couldn’t read the top line at the eye doctor.

As nighttime images of the earth from the International Space Station confirm, ours is an increasingly illuminated world. And LEDs, or light emitting diodes, supply a cheap and efficient means for broad illumination, not just for vehicles but increasingly for street lighting. Yet some types of LEDs have recently raised concerns of associated health risks.

Written By Sanjay Gupta, VP Product Management, WiTricity

While the possibilities of magnetic-resonance-based wireless charging are very exciting, the technology is frequently misunderstood by those not involved in the industry.

Consider the devices we use every day: From smartphones and smartwatches and potentially electric vehicles, electronics are becoming as mobile as people themselves. We rely and expect our devices to be charged at all times, ready-to-use when needed. But as it currently stands, we still must plug in our phones, our electric cars, and our smartwatches, tethering us to cords and cables, triggering range anxiety and obsessing about the remaining juice on our devices.

Gallium nitride (GaN) power transistors designed for efficient power conversion have been in production for seven years. New markets, such as light detection and ranging, envelope tracking, and wireless charging, have emerged due to the superior switching speed of GaN. These markets have enabled GaN products to achieve significant volumes, low production costs, and an enviable reliability reputation. All of this provides adequate incentive for the more conservative design engineers in applications such as dc–dc converters, ac–dc converters, and automotive to start their evaluation process. So what are the remaining barriers to the conversion of the US$12 billion silicon power metal–oxide–semiconductor field-effect transistor (MOSFET) market? In a word: confidence. Design engineers, manufacturing engineers, purchasing managers, and senior management all need to be confident that GaN will provide benefits that more than offset the risk of adopting a new technology. Let’s look at three key risk factors: supply chain risk, cost risk, and reliability risk.

Gallium nitride (GaN) is a better semiconductor than silicon. There are many crystals that are better than silicon, but the problem has always been that they are far too expensive to be used in every application where silicon is used. But, GaN can be grown as an inexpensive thin layer on top of a standard silicon wafer enabling devices that are faster, smaller, more efficient, and less costly than their aging silicon counterparts.

This post was written by EDN senior technical editor, Steve Taranovich for the Power-management Design Center , How To Article section on APEC 2017. Originally published on April 03, 2017.”

This post was originally published on TI’s TI E2E Community “Power House” Blog. Learn more about eGaN technology here and EPC GaN solutions here.

The previous installment in this series focused on the physics of failure surrounding thermo-mechanical reliability of EPC eGaN® wafer level chip-scale packages. A fundamental understanding of the potential failure modes under voltage bias is also important. This installment will provide an overview of the physics of failure associated with voltage bias at the gate electrode of gallium nitride (GaN) field effect transistors (FETs). Here we look at the case of taking the gate control voltage to the specified limit and beyond to investigate how eGaN FETs behave over a projected lifetime.