Product Selector Guide for Gallium Nitride (GaN) FETs and ICs

Use our interactive parametric selection tool to identify the best possible eGaN® solution for your power conversion system.

GaN Power BenchAccess cross reference search, design tools, models, and performance simulations in our GaN Power Bench to assist your design process.

For more information on EPC’s GaN technology download our Technology Brief 한국어 버전

For more information on using GaN devices, download the ebooks Basics of Using GaN in Power Applications and Design Tips for Using GaN in Power Applications

Click on Part Number to access product details and datasheet.

For guidance on assembly techniques click here for more information.

Due to their increased frequency capability and ultra-low RDS(ON), eGaN FETs and integrated circuits increase the performance of applications using standard silicon MOSFETs and enable applications that were not achievable with silicon technology. Gallium Nitride devices save space, improve efficiency, increase manufacturing efficiencies, and lower system costs.