Gallium Nitride (GaN) Power Devices

Gallium nitride (GaN) transistors and integrated circuits (ICs) offer fundamental advantages over silicon. GaN-based solutions exceed the performance capabilities of silicon in speed, temperature, and power handling. These improvements offer greater efficiency, significantly reduced size and weight, reduced cost, and improved thermal performance.

For more information on EPC’s GaN technology, download our Technology Brief

For more information on using GaN devices, download the ebooks Basics of Using GaN in Power Applications and Design Tips for Using GaN in Power Applications

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Product Selector Guide for Gallium Nitride (GaN) FETs and Integrated Circuits (ICs)

Use our interactive parametric selection tool to identify the best possible eGaN® solution for your power conversion system.

For guidance on assembly techniques click here for more information.

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Why EPC?

  • Broad Product Portfolio
    EPC provides enhancement-mode gallium nitride (eGaN®) FET and IC technology for power management that are higher performance and lower cost compared with silicon. With products in the voltage range from 15 V to 350 V EPC offers the largest GaN product portfolio in the marketplace available for off-the-shelf delivery, including automotive qualified and radiation hardened devices.
  • Robust Reliability
    With a remarkable field reliability record and an extensive reliability testing discipline, EPC ensures the highest standards and offers products with proven robustness beyond the capabilities of silicon.
  • Market Adoption
    EPC GaN FETs and ICs are present in a wide range of applications from servers, 48 V-based electric vehicle power, motor drives for eMobility, robotics, drones, lidar for advanced autonomy, and low-cost satellites.
  • Reliable Supply
    EPC has a world-class supply chain, including manufacturing, packaging, and distribution, that is mature, efficient, and responsive.