热阻是决定分立功率器件性能的主要因素。根据设备的热特性，可以得出用户应用的最大功耗和最大电流。《EPC eGaN FET的热性能》应用笔记描述了eGaN FET热阻测量的测试方法和结果。

简单且具经济效益的热管理策略可改善 GaN FET 的热传导和优化热性能。《How2AppNote012-如何从基于eGaN器件的转换器获得更多功率》中分析了从板侧和背面冷却的影响。 我们总结如下。

值得注意的是，EPC GaN FET可以利用双面冷却来最大限度地提高高功率密度设计中的散热性能。《How2AppNote012-如何从基于eGaN器件的转换器获得更多功率》对此进行了详细介绍。

Thermal interface materials (TIM) are a critical part of the cooling system when using top sided cooling. Since GaN devices are very small, effective cooling relies on the heat-spreading effect of the heatsink, however, the TIM layer does not benefit from this. Because of its small area, the TIM layer ends up being a significant contributor to the overall R_th,J-A, and therefore the use of high thermal conductivity materials is very beneficial. The TIM layer also has a very important second role: to electrically isolate the GaN devices from the heatsink since the top of EPC GaN FETs are connected to source potential.

EPC has gathered some information on TIM materials to help designer in their search:

TIM Pads

TIM compound and greases

使用GaN FET热计算器可以进一步优化散热设计。确定了功耗后，利用GaN FET热计算器优化散热解决方案。

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