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安多佛, MA – 2025年6月 – EPC Space,一家辐射硬化(RH)氮化镓(GaN)功率器件的领导者,宣布推出EPC7030MSH,一种辐射硬化(RH)300伏氮化镓(GaN)FET,为高压、高功率的太空应用提供无与伦比的性能,包括下一代卫星电站和电推进系统。
随着卫星平台需要更高电压总线来支持日益增长的电力需求和先进的太阳能阵列技术,EPC7030MSH满足了高效、紧凑和强大前端电源转换的关键需求。
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将GaN带入最后的边疆,EPC Space推出了两款新的辐射加固GaN晶体管,用于空间应用中的高电流开关。随着商业卫星数量的不断增加,设计人员需要更多选项来满足具有改进电流处理能力的空间电力电子设备的需求。
《All About Circuits》
2023年9月
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随着处理能力的增强和更复杂的负载被放置在轨道上或深空任务中,有时需要并联两个或多个电源开关。然而,传统的电源设备封装,如FSMD-A/B/C/D及其I/O垫片设置,使得在性能敏感的情况下实现这些设备的并联变得困难。当并联时,这些封装上的栅极和源感垫片要么阻挡了从封装到封装的漏极和源极连接的最有效/最短互连,要么阻挡了栅极和源感垫片的连接。因此,在并联配置中,总是在优化漏极-源极负载电路性能和栅极-源感驱动环路性能之间做出妥协。本文介绍了FSMD-G离散HEMT封装,并解释了其I/O垫片的重新配置如何在并联GaN HEMT时克服这些限制。
How2Power
2023年9月
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EPC Space 推出了用于太空电源转换器和其他恶劣环境的抗辐射氮化镓设备。
电子周刊
2023年8月
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氮化镓(GaN)器件提供了众多优势,非常适合空间工业的需求,解决了与可靠性、辐射生存能力和空间遗产相关的挑战。
电力电子新闻
2023年8月
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高效电力转换公司(EPC)扩展了其用于电力转换解决方案的抗辐射氮化镓(GaN)产品系列,推出了两款新的40V器件,额定电流分别为62A和250A,以应对关键的太空和其他高可靠性应用。
加利福尼亚州埃尔塞贡多 — 2023年7月 — EPC宣布推出两款新型40V额定抗辐射GaN FET。EPC7001是一款40V,4mΩ,250A脉冲,抗辐射GaN FET,封装尺寸仅为7mm2。EPC7002是一款40V,14.5mΩ,62A脉冲,抗辐射GaN FET,封装尺寸仅为1.87mm2。两款器件的总剂量辐射等级均超过1,000K Rad(Si),并具有在VDS达到额定击穿电压100%的情况下对83.7 MeV/mg/cm2的LET的单粒子效应(SEE)免疫。这些新器件以及其余的抗辐射系列产品,均以芯片级封装形式提供。封装版本可从EPC Space获得。
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在本期《Spirit: 幕后揭秘》节目中,Spirit Electronics 的 CEO Marti McCurdy 与 EPC 的 CEO Alex Lidow 和市场总监 Renee Yawger 聊天,讨论了氮化镓(GaN)的进展。他们讨论了 GaN 在高辐射下的性能,以及 EPC 的第 15 阶段可靠性报告中详细介绍的大量测试、失效模式和器件寿命。随着 GaN 的全部潜力尚待发掘,并且 EPC 新产品频繁发布,包括新的半桥驱动器、低侧驱动器和完整的功率阶段,GaN 在新空间和商业空间应用中尤为有用。
Spirit: 幕后揭秘
收听播客
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .
EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint. Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family. Packaged versions will be available from EPC Space.
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GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).
EETimes
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宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列,新推的100 V产品用于要求严格的机载和其他高可靠性环境下的电源转换解决方案,进一步为这个产品系列添加第五个成员。
EPC公司宣布推出100 V、7 mΩ、160 APulsed的耐辐射GaN FET EPC7004。尺寸小至6.56 mm2,其总剂量等级大于1 Mrad,线性能量转移(LET)的单一事件效应(SEE)抗扰度为85 MeV/(mg/cm2)。EPC7004与EPC7014、EPC7007、EPC7019和EPC7018器件都是采用芯片级封装,这与其他商用的氮化镓场效应晶体管(eGaN® FET)和IC相同。封装器件将由EPC Space提供。
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宜普电源转换公司(EPC)扩展了其耐辐射氮化镓产品系列,新推的100 V器件用于要求严格的机载和其他高可靠性环境的电源转换解决方案,与目前市场上的任何100 V耐辐射晶体管相比,它具有最低的导通电阻。
EPC公司宣布推出100 V、3.9 mΩ、345 APulsed的耐辐射GaN FETEPC7018,尺寸为13.9 mm2,其总剂量等级大于1 Mrad,线性能量转移(LET)的单一事件效应(SEE)抗扰度为85 MeV/(mg/cm2)。与EPC7014、EPC7007和EPC7019耐辐射产品系列相同,都是采用芯片级封装。封装器件由EPC Space.提供。
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.
EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
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As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.
Components in Electronics
October, 2021
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Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.
Electronics Weekly
September, 2021
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Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.
Power Electronics News
September, 2021
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航空航天应用的技术发展是 2021 年的重要组成部分,因此更多的抗辐射元件即将问世。 最近新推两款新型场效应晶体管,它们给航太领域带来了什么?
All About Circuits
2021 年 6 月
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Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.
Power Electronics Europe
December, 2020
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氮化镓功率晶体管是面向严苛航太任务的功率和射频应用的理想器件。 通过全新基于eGaN®器件的解决方案,EPC Space公司提供专门为商业卫星关键应用而设计的氮化镓器件,可确保器件的耐辐射性能和对单粒子效应的免疫能力。 这些器件具有极高的电子迁移率、低温度系数和非常低的导通阻抗。
EETimes
2020年7月
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面向关键宇航应用及其它高可靠性应用环境,合资公司EPC Space为客户提供先进、高可靠性的氮化镓功率转换解决方案,从而确保更可靠的操作和任务成功。
宜普电源转换公司(EPC)与VPT公司(海科航空公司旗下公司、NYSE交易代号为HEI.A及HEI)宣布成立合资公司EPC Space LLC,针对卫星及高可靠性应用,从事设计和制造耐辐射、采用封装、通过测试和经认证合格的硅基氮化镓晶体管和集成电路。
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Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.
The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.
Electro Pages
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