EPC7014 - Rad Hard Enhancement Mode Power Transistor

VDS, 60 V
RDS(on), 340 mΩ
ID, 2.4 A
Pulsed ID, 4 A
95%Pb/5%Sn solder

EPC7014 Enhancement Mode GaN Power Transistor
Die Size: 0.9 mm x 0.9 mm

Applications

  • Commercial satellite EPS & avionics
  • Deep space probes
  • High frequency Rad Hard DC-DC conversion
  • Rad Hard motor drives

Benefits

  • Ultra-high efficiency
  • Ultra-low gate charge
  • Ultra-small footprint
  • Lightweight
  • Total dose
    • Rated > 1 Mrad
  • Single event
    • SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown
  • Neutron
    • Maintains Pre-Rad specification for up to 3 x 1015 Neutrons/cm2
Status: Preferred
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Datasheet

Evaluation Boards

Quality & Reliability

Design Resources

Application Notes

Device Models

Export Classification

ITAR Controlled? No

EAR? Yes

ECCN? 9A515.e

ECCN classification 9A515.e allows for the export of this product to many countries with no license required.

See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.

Design Tools

Product Change Notice