EPC7007 - 200 V Rad Hard Enhancement Mode Power Transistor

VDS, 200 V
RDS(on), 25 mΩ
ID, 20 A
Pulsed ID, 80 A
95%Pb/5%Sn solder

EPC7007 Enhancement Mode GaN Power Transistor
Die Size: 3.6 mm x 1.6 mm


  • Commercial satellite EPS & avionics
  • Deep space probes
  • High frequency Rad Hard DC-DC conversion
  • Rad Hard motor drives
  • Ion thrusters


  • Ultra-high efficiency
  • Ultra-low on-resistance
  • Ultra-low charges
  • Ultra-small footprint
  • Lightweight
  • Total dose
    • Rated > 1 Mrad
  • Single event
    • SEE immunity for LET of 85 MeV/(mg/cm2) with VDS up to 100% of rated breakdown
  • Neutron
    • Maintains Pre-Rad specification for up to 3 x 1015 Neutrons/cm2
Status: Engineering
Engineering devices, designated with an ENG* suffix at point of purchase, are on engineering status and should not be used for reliability stress testing or other qualification testing without contacting your local field application engineer for the latest status.
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Design Resources

Export Classification

ITAR Controlled? No

EAR? Yes

ECCN? 9A515.e

ECCN classification 9A515.e allows for the export of this product to many countries with no license required.

See Supplement No. 1 to Part 738 – Commerce Country Chart for countries with no “X” in column NS2.