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EPC推出由氮化镓场效应晶体管驱动且可扩展的 1.5 kW 48 V/12 V DC/DC演示板,为轻度混合动力汽车和电池备用装置提供更高效、更小、更快的双向转换器

EPC推出由氮化镓场效应晶体管驱动且可扩展的 1.5 kW 48 V/12 V DC/DC演示板,为轻度混合动力汽车和电池备用装置提供更高效、更小、更快的双向转换器

EPC9137是一款两相的48 V/12 V双向转换器,以小型化解决方案提供1.5 kW功率,效率为97%,适用于轻度混合动力汽车和电池电源备用装置。

宜普电源转换公司(EPC)宣布推出EPC9137,这是一款1.5 kW的两相48 V/12 V双向转换器,占板面积小,效率为97%。该演示板的设计是可扩展的–并联两个转换器可实现3 kW,或者并联3个转换器可实现4.5 kW。该板使用4个100 V的eGaN®FET(EPC2206),并由一个包括Microchip dsPIC33CK256MP503 16位数字控制器的模块控制。

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Product roundup: GaN power semiconductors gain traction

(Image: Yole)

Product roundup: GaN power semiconductors gain traction

Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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EPC公司推出用于更高效、运行更安静和尺寸更小的电机 且基于氮化镓集成功率级的400 W电机驱动器演示板

EPC公司推出用于更高效、运行更安静和尺寸更小的电机 且基于氮化镓集成功率级的400 W电机驱动器演示板

EPC9146演示板展示EPC2152 ePower™功率級使能高性能且低成本的BLDC電機,從而實現具有更高的性能和更小型化的解決方案。

宜普电源转换公司(EPC)宣布推出400 W电机驱动演示板(EPC9146),包含三个独立控制的半桥电路,采用集成了栅极驱动器的单片式EPC2152EPC2152 ePower™功率级,其最大电压为80 V和最大输出电流为15 A(10 ARMS)。板的尺寸仅为81 mm x 75 mm,在输出功率为400 W时,可实现超过98.4%的效率。

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EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

EPC to Showcase High Power Density eGaN FETs and ICs in Volume Customer Applications at PCIM Europe 2021 Digital Days

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN® technology.

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Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) Receives Elektra Award 2020 for Semiconductor Product of the Year (Analogue) for ePower Stage IC

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

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宜普电源转换公司(EPC)扩大eToF 激光驱动器IC系列, 助力扩增实境(AR)的发展

宜普电源转换公司(EPC)扩大eToF 激光驱动器IC系列, 助力扩增实境(AR)的发展

宜普电源转换公司(EPC)宣布扩大氮化镓(GaN)集成电路(IC)系列,实现性能更高、更小巧且采用飞行时间(ToF)技术的激光雷达应用,包括机器人、无人机、3D传感器,电玩和自动驾驶汽车等应用。

宜普电源转换公司(EPC)宣布推出激光驱动器IC(EPC21603),在单个芯片上集成了40 V、10 A 场效应晶体管、栅极驱动器和LVDS逻辑电平输入,面向飞行时间(ToF)激光雷达系统,用于机器人、无人机、扩增实境和电玩等应用。

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氮化镓(GaN)集成电路重新定义功率转换

氮化镓(GaN)集成电路重新定义功率转换

氮化镓技术发展迅速,在开发出多代全新分立器件后,具备更高效、更小尺寸和成本更低等优势的新世代集成电路继续崛起。氮化镓集成电路让产品可以更小型化、开关更快、更高效且更易于设计。

Power Systems Design
2021年3月 (第36-39页)
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How GaN Integrated Circuits Are Redefining Power Conversion

How GaN Integrated Circuits Are Redefining Power Conversion

Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
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Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

Lidar Demonstration Board Drives Lasers with Currents up to 220 A with Under 3-ns Pulses using eGaN FETs

The ultra-fast transition EPC2034C eGaN® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

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EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

EPC Automotive Qualified 65 V eGaN FET Enables Higher Resolution for Lidar Systems

Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

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Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Minimizing Thermo-mechanical Stress in Chipscale eGaN Devices

Enhancement-mode gallium nitride (eGaN) FETs have demonstrated excellent thermomechanical reliability in actual operation in the field or when tested according to AEC or JEDEC standards. This is because of the inherent simplicity of the “package,” the lack of wire bonds, dissimilar materials, or mold compound. Recently, an extensive study of underfill products was conducted to experimentally generate lifetime predictions. A finite element analysis at the end of this section explains the experimental results and generates guidelines for selection of underfill based on key material properties.

Bodo's Power
March, 2021
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宜普电源转换公司(EPC)eToF 激光驱动器IC 助力革新激光雷达系统设计

宜普电源转换公司(EPC)eToF 激光驱动器IC 助力革新激光雷达系统设计

宜普电源转换公司(EPC)推出首个氮化镓(GaN)集成电路(IC)系列,实现性能更高、更小巧且采用飞行时间(ToF)技术的激光雷达应用,包括机器人、无人机、3D传感器和自动驾驶汽车等应用。

宜普电源转换公司(EPC)宣布推出激光驱动器IC(EPC21601),在单个芯片上集成了40 V、10 A 场效应晶体管、栅极驱动器和3.3 V逻辑电平输入,面向飞行时间(ToF)激光雷达系统,用于机器人、监控保安系统、无人机、全自动驾驶汽车和吸尘器。

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EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower Stage EPC2152 Integrated Circuit Named Finalist in Prestigious Elektra Awards

EPC’s ePower™ Stage EPC2152 Integrated Circuit has been selected as a finalist in the Semiconductor Product of the Year – Analogue category, in this year’s Elektra Awards.  These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation and contribution to the global electronics industry.

Companies are invited to enter individual categories and must demonstrate how innovative their product is, how it addresses its intended application better than incumbent products and what additional applications or markets could be opened-up.  Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.  Due to the current COVID restrictions the Elektra Awards ceremony this year will be held virtually on 25th March and the winners announced during the event.

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GaN Is Revolutionizing Motor Drive Applications

GaN Is Revolutionizing Motor Drive Applications

In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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GaN for High Density Servers

GaN for High Density Servers

Gallium nitride (GaN) devices offer performance in a small form factor, increasing the efficiency, and reducing the system cost for 48 V power conversion applications. They have been adopted in high volumes in high density computing, as well as many new automotive power system designs.

Electronic Specifier
February, 2021
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GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

GaN is as Easy to Use as Silicon: EPC Introduces a 48 V to 12 V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller

The combination of the Renesas dual synchronous GaN buck controller and ultra-efficient eGaN® FETs from EPC (Efficient Power Conversion) enables high power density and efficiency with the same BOM size and cost as silicon.

EL SEGUNDO, Calif.—  February, 2021 — EPC announces the availability of the EPC9157, a 300 W DC-DC demo board in the tiny 1/16th brick size, measuring just 33 mm x 22.9 mm x 9mm (1.3 x 0.9 x 0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80 V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48 V input to 12 V regulated output conversion at 25 A.  

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