Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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EPC introduces the 40 V, 3 milliohm EPC2055 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

面向高功率密度且低成本的DC/DC转换，EPC9151功率模块利用EPC2152 ePower™功率级实现性能更高和尺寸更小的解决方案。

宜普电源转换公司（EPC）宣布推出EPC9151，这是一款300 W、双向、超小尺寸的1/16砖型DC/DC降压转换器模块，其尺寸仅为33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151采用Microchip公司的数字信号控制器（dsPIC33CK）和EPC公司的 ePower™ 功率级集成电路（EPC2152），于300 W、48 V/12 V的转换器中，可以实现95％以上的效率，而且可以在这个可扩展的两相设计中增加相数，使得功率可以更高。

新一代200 V 氮化镓场效应晶体管（eGaN^® FET）是48 V_OUT同步整流、D类音频放大器、太阳能微型逆变器和功率优化器，以及多电平、高压AC / DC转换器的理想功率器件。

增强型硅基氮化镓（eGaN）功率场效应晶体管和集成电路的全球领导厂商宜普电源转换公司（EPC）最新推出的两款200 V eGaN FET（EPC2215和EPC2207），性能更高而同时成本更低，目前已有供货。采用这些领先氮化镓器件的应用十分广阔，包括D类音频放大器、同步整流器、太阳能最大功率点跟踪器（MPPT）、DC/DC转换器（硬开关和谐振式），以及多电平高压转换器。

美国微芯科技公司（Microchip Technology Inc.）的数字信号控制器（DSC）与宜普电源转换公司（EPC）的超高效氮化镓场效应晶体管（eGaN^®FET）的结合，可实现最佳功率密度（730 W/in³），从而实现高效、低成本的DC-DC转换。

EPC公司宣布推出1/16砖式、300 W DC/DC稳压器（EPC9143）。 EPC9143功率模块把Microchip dsPIC33CK数字信号控制器（DSC）和最新一代eGaN FET（EPC2053）集成在一起，实现25 A、48 V/12 V和96％效率的功率转换。

EPC9144演示板内的车规级EPC2216氮化镓场效应晶体管（eGaN^® FET）可支持大電流納秒脈衝的應用，提供高速的大电流脉冲 – 电流可高达28 A、脉宽则可低至1.2纳秒，从而使得飞行时间及flash激光雷达系统更准确、更精确及更快速。

宜普电源转换公司（EPC）宣布推出15 V、28 A大电流脉冲激光二极管驱动电路板（EPC9144）。

In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN^® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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为了使得客户易于集成功率系统，宜普电源转换公司（EPC）为客户提供领导业界的氮化镓功率器件的晶圆。

EPC公司宣布推出领导业界的增强型氮化镓器件的晶圆，使得客户易于集成功率系统。EPC公司的氮化镓场效应晶体管（eGaN^® FET）及集成电路一直以来都是以单个并包含锡条或锡球的芯片级器件出售。

宜普电源转换公司（EPC）进一步扩大车规级氮化镓产品系列 – 全新成员是面向具有高分辨率的激光雷达系统、80 V的EPC2214氮化镓场效应晶体管，该元件成功通过国际汽车电子协会所制定的AEC Q101应力测试认证。

宜普电源转换公司（EPC）宣布再多一个车用氮化镓(eGaN)器件（80 V的EPC2214）成功通过AEC Q101测试认证，可在车用及其它严峻环境支持多种全新应用。

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17^th through the 21^st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

继第一至第九阶段可靠性测试报告后，EPC公司的 第十阶段可靠性测试报告进一步丰富知识库。此报告对超过30,000个元件进行了超过1,800万小时的应力测试后，没有器件发生故障。在过去的两年间，我们所付运的数百万个元件没有发生现场失效的情况。

宜普电源转换公司（EPC）发布第十阶段可靠性测试报告，成功通过车规级AEC-Q101应力测试认证。AEC-Q101认证要求功率场效应晶体管符合最高的可靠性标准，不仅仅要求器件符合数据表内所载的条件而没有发生故障，也同时要求在应力测试中，具有低漂移。请注意，EPC所采用的晶圆级芯片规模封装（WLCSP）也符合所有针对传统封装的测试标准，展示出该封装具备卓越性能之同时没有影响到器件的稳固性或可靠性。

In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users.

EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN market and the state-of-the-art for its underlying technology.

作为为支持DC/DC、激光雷达（LiDAR）、无线电源应用等方面不断扩大的客户群进行扩展的一部分，宜普电源转换公司（EPC）扩大了其在亚洲的团队，增加的新成员将与整个亚太地区21个地区的客户保持密切联系。

2018年11月28日— 为了支持在亚太地区正在加速的销售增长，宜普电源转换公司（EPC）宣布扩大亚太地区的销售和FAE团队，以支持其不断扩大的客户群，积极获取全新的业务发展及抓住全新的市场商机。