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氮化镓功率晶体管EPC2050专为功率系统设计人员而设计,在极小的芯片级封装中,实现 350 V、80 mΩ 最大 RDS(on)和26 A 峰值电流,是多电平转换器、电动汽车充电、太阳能逆变器、激光雷达和 LED 照明的理想器件。
宜普电源转换公司(EPC)宣布推出 EPC2050,这是一款 350 V GaN 晶体管,最大 RDS(on) 为 80 mΩ,脉冲输出电流为 26 A。 EPC2050 的尺寸仅为 1.95 mm x 1.95 mm,与采用等效硅器件的解决方案相比,基于EPC2050的解决方案的占板面积小十倍。
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The latest ePower™ integrated circuits based on gallium nitride technology by Efficient Power Conversion are revolutionizing motor drive applications such as industrial drones, e-bikes, scooters, power tools.
Bodo’s Power Systems
April, 2022
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以碳化硅(SiC)、氮化镓(GaN)材料为主流的宽带隙(WBG)半导体功率器件,在节能永续意识抬头的今日成为各种功率系统应用的宠儿。2022年Tech Taipei研讨会首度以WBG器件为题,邀请业界重量级业者,从设计、制造、测试等不同面向与现场超过400位听众分享最新技术与应用趋势...
EE Times Taiwan
2022年3月25日
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当数据中心的服务器转用48 V架构,氮化镓晶体管可以替代目前的硅MOSFET器件,性能得以进一步提升和成本可以更低。
Data Center Dynamics
2022年3月
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EPC9171 评估板可将90 V~265 V通用交流输入电压转换为可调 15 V至48 V直流输出电压。该参考设计可在 48 V 输出电压和 5 A 负载电流下,提供 240 W 的最大输出功率。
宜普电源转换公司(EPC)宣布推出EPC9171,可将90 V~265 V通用交流输入电压转换为15 V ~48 V直流输出电压,专为 USB PD3.1超快速充电器而设计。此参考设计可在 48 V 输出电压和 5 A 负载下,提供 240 W 最大输出功率。在初级侧和次级侧电路采用在高频率下开关的氮化镓功率器件,可实现约 1.1 W/cm3的功率密度。
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments with a device that has the lowest on-resistance of any rad hard transistor currently available on the market.
EL SEGUNDO, Calif.— March 2021 — EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
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EPC公司和ADI公司推出参考设计,采用全面优化的新型模拟控制器来驱动EPC公司的氮化镓场效应晶体管(GaN FET)。新型模拟LTC7890同步氮化镓降压控制器与EPC公司的超高效eGaN® FET相结合,可实现高达2 MHz的开关频率,从而实现高功率密度和低成本的DC/DC转换。
宜普电源转换公司(EPC)宣布推出EPC9160,这是一款双输出同步降压转换器参考设计,开关频率为2 MHz,可将9 V~24 V的输入电压转换为3.3 V或5 V的输出电压,两个输出的连续电流可高达15 A。由于开关频率高,转换器的尺寸非常小,两个输出都只有23 mm x 22 mm和电感器的厚度只有3 mm。
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Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.
Bodo’s Power Systems
March, 2022
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The EPC9167 GaN-based inverter reference design enhances motor system performance, range, precision, torque, all while lowering overall system cost. The extremely small size of this inverter allows integration into the motor housing resulting in the lowest EMI, highest density, and lowest weight.
Robotics Tomorrow
March, 2022
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采访视频 - 宜普电源转换公司的首席执行官 Alex Lidow与Electronic Design媒体讨论了氮化镓技术的未来发展、普及率及其在电源供电和其他技术中的应用。
Electronic Design
2022年3月
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我们将在本文讨论客户为何迟迟未采用氮化镓技术的一些最常见原因,氮化镓技术显然是较旧的硅基功率MOSFET的替代技术。在不深入研究详细的统计数据下,按最常发生推导出一系列原因,并理解某些应用比其他应用更侧重氮化镓技术的某些特性。我们的讨论仅限于额定电压低于400 V的器件,因为这是EPC公司的氮化镓场效应晶体管和集成电路的重点应用。
PSD功率系统设计
2022年3月
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EPC公司的氮化镓专家将在APEC展会分享多项现场演示以阐释氮化镓技术如何为许多行业的功率转换带来革命性突破,包括计算、通信和e-mobility。
宜普电源转换公司(EPC)团队将于3月20日至24日在休斯顿举行的IEEE应用电力电子会议和博览会(APEC 2022)上进行多场关于氮化镓技术的演讲和专业研讨会,详请如下。 此外,我们将在1302号展位展出采用新型eGaN®FET 和 IC的客户的最新产品。
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由氮化镓技术专家 EPC 与 MPS 合作开发的双向转换器可实现97%的峰值效率。
EETimes
2022年2月
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基于氮化镓器件的EPC9167 逆变器参考设计提高电机系统性能、范围、精度、扭矩且同时降低整体系统成本。 该逆变器尺寸超小,可集成到电机外壳中,从而实现具有最低 EMI、最高功率密度和最轻的电机驱动逆变器。
宜普电源转换公司(EPC)宣布推出 EPC9167,这是一款采用 EPC2065 eGaN® FET 的三相 BLDC电机驱动逆变器。EPC9167在 14 V 和 60 V(标称 48 V)之间的输入电压下工作,并备有两种配置 —— 标准和大电流版本:
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A few simple thermal management guidelines can help conduct heat away from GaN FETs. Enhancement-mode gallium nitride (eGaN) FETs offer high power-density with ultra-fast switching and low on-resistance, all in a compact form factor. However, the power levels these high-performance devices provide can be limited by extreme heat-flux densities. If not managed properly, the generated heat can compromise reliability and performance. Fortunately, chip-scale packaging for eGaN FETs can be leveraged at the board-side and the backside (i.e., case) to better dissipate heat.
Power Electronics Tips
February, 2022
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EPC9165 是一款两相、稳压输出电压、48 V/14 V双向转换器,可实现2 kW 的功率和 96.8% 的峰值效率
宜普电源转换公司(EPC)宣布推出EPC9165,这是一款2 kW、两相48 V/14 V双向转换器,在小尺寸内实现97%的峰值效率,非常适合具有高密度和高功率的48V电池组,例如电动和轻型运输所需的电池组。
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This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.
Electronics Today
December/January Edition
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Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry
systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.
Bodo’s Power Systems
December, 2021
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EPC公司推出了100 V、65 A 集成电路芯片组,专为 48 V DC/DC 转换而设计,用于高密度计算应用,以及用于电动汽车、机器人和无人机的 48 V BLDC电机驱动器。EPC23101 eGaN IC 配合 EPC2302 eGaN FET成为ePower芯片组,其最大耐受电压为 100 V,提供高达 65 A 的负载电流,开关速度大于 1 MHz。
Bodo’s Power Systems
2022 年 2 月
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Efficient Power Conversion (EPC) publishes Phase-14 Reliability Report, which adds to the extensive knowledge and demonstrates a robustness capability unmatched by silicon power devices.
EL SEGUNDO, Calif.— February 2022 — EPC announces its Phase-14 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. The rapid adoption of GaN devices in many diverse applications calls for the continued accumulation of reliability statistics and research into the fundamental physics of failure in GaN devices. The Phase-14 Reliability Report presents the strategy used to measure and predict lifetime based upon tests that force devices to fail under various conditions. This information can be used to create more robust and and higher performance products for applications such as lidar for autonomous cars, robotics, security, and drones, high power density computing, and satellites, to name just a few.
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