In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

LIDAR is made up of a laser (or arrays) capable of transmitting pulsed light over the required range of interest, and a high-speed, low-noise receiver for reflected signal analysis. A portion of this light is reflected or scattered back to the receiver according to the reflectivity of the target.

EDN Network
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EPC公司将在3月14至16日于中国深圳及上海各大论坛及展会亮相，展示氮化镓技术的卓越性能如何为整个半导体业界带来全新电源转换设计思路，包括无线充电、DC/DC、激光雷达及汽车等应用领域。

EPC公司的管理及技术团队将在中国深圳及上海于3月14至16日举行的各大业界论坛及展会上，与工程师会面并作技术交流。届时，EPC团队将分享如何发挥氮化镓场效应晶体管（GaN FET）及集成电路的最高性能、创新设计，从而为工程师及其客户，打造共创共赢新局面。

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN^® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

Alex Lidow与他的团队队员Michael de Rooij、David Reusch及John Glaser于今天早上的专业研讨会上，与专业工程师（PE）分享实用的议题 -- “发挥氮化镓场效应晶体管及集成电路的最高性能，不仅仅替代MOSFET器件”，使得整个教室被挤得水泄不通。

Planet Analog
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Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

宜普公司的EPC9130五相开发板展示出采用高频开关eGaN^®功率晶体管、极小型化及增强了效率的电源转换方案。

宜普电源转换公司(EPC)的EPC9130 开发板是一款48 V转换至12 V的非隔离稳压式开发板、具用五个相位、每相具12 A、最大输出电流为60安培，开发板的输出功率可以超过700 W。该板具超高功率密度（每立方英寸大于1250 W），其效率高于96%。

Gamers may not care about the finer points of gallium nitride (eGaN) chips as evangelized by power pioneer Alex Lidow, CEO of Efficient Power Conversion (EPC). But they will care that those chips will enable a new generation of gaming laptops with much smaller power supplies than in the past.

Venture Beat
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Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
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SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters.

Power Electronics
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Developers are hard at work on the machine learning necessary for safer and more-autonomous vehicles. But all the AI in the world won’t be enough if the car relies on inadequate sensors. That was clearly demonstrated in one fatal Tesla crash that occurred in part because the car’s camera didn’t correctly identify an oncoming truck. To ensure smart vehicles have a reliable model of surrounding objects — particularly the ones the cars identify as “threats” — most rely on one or more lidars, or laser-based remote sensors.

Extreme Tech
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LAS VEGAS — Once again the marathon that is CES is drawing to a close. Four days of trade show plus two days of media events. All sprawled across five miles of Las Vegas in some insane number of hotels and conference venues. As usual, I stuck it out so you don’t have to. Here are some of the images that struck me as interesting, weird, or just plain worth remembering:

Extreme Tech
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Wireless power, the ability to deliver electricity to gadgets without plugging those gadgets into a cable, is a hotbed of innovation at the moment. The dominant standard, called “Qi,” is ever under attack from other efforts.

This week saw interesting developments from Energous (WATT), which aims to transfer power via radio frequency transceivers, with limited results so far, and some controversy about its business.

There are other contenders. On Wednesday in Las Vegas, during the Consumer Electronics Show, I met with Alex Lidow, who is founder of a privately held chip company EPC of El Segundo, California.

Barron's
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This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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宜普公司为功率系统设计师提供比等效MOSFET小型化8倍的40 V、5 mΩ氮化镓功率晶体管（EPC2049），应用于负载点（POL）转换器、激光雷达（LiDAR）及具低电感的马达驱动器。

宜普电源转换公司（EPC）宣布推出EPC2049功率晶体管，应用于负载点（POL）转换器、激光雷达（LiDAR）、包络跟踪电源、D类音频放大器及具低电感的马达驱动器。 EPC2049晶体管的额定电压为40 V、最大导通电阻为5 mΩ及脉冲输出电流为175 A。

EPC公司将于国际消费电子展CES^® 2018并于AirFuel^TM联盟展览摊位展示氮化镓（GaN）半导体如何实现大面积电源。此外，EPC在其Hospitality Suite将展示家居无线电源系统，以及基于氮化镓器件并应用于全自动汽车、领先业界的激光雷达系统。

EPC公司将于2018年1月9日至12日在美国拉斯维加斯举行的国际消费电子展（CES 2018）展示eGaN^®技术如何实现两种改变业界游戏规则的消费电子应用 -- 分别是无线充电及自动驾驶汽车的激光雷达 应用。

如果要无线充电得以普及， 无线充电系统必需从小型充电垫发展成为大面积无线电源。这就需要磁共振系统的线圈、系统架构及功率放大器各方面的基本改变。基于氮化镓器件的放大器已经被证明为可以在广阔的负载范围内发送60 W功率至发射线圈并实现超过90% 的效率。

作者：张远哲及Michael A. de Rooij
Power Electronics Europe杂志
2017年11月/ 12月刊
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EPC9126HC开发板采用具备超快速功率转换特性的氮化镓场效应晶体管(eGaN FET)，由于可以驱动高达150 A及可低至5 ns脉宽的脉冲大电流，因此可以提高激光雷达（LiDAR）系统所侦测的资料的质素，包括资料的准确性、精确度及制作速度。

宜普电源转换公司（EPC）宣布推出全新的100 V、150 A大电流脉冲激光二极管的驱动演示电路板（EPC9126HC）。面向全自动汽车应用的激光雷达系统需要制作三维地图，因此，侦测四周的目标物件的速度及准确性变得非常重要。从EPC9126HC演示电路板可以看到，与等效MOSFET相比，具备快速转换特性的氮化镓场效应晶体管(eGaN FET)所提供的脉冲功率可以快十倍的速度驱动激光二极管，从而提升激光雷达系统的整体性能。

EPC2040, an eGaN^® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 — Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.