常見問題

eGaN® Technology

eGaN transistors are very similar to lateral FETs (Field Effect Transistors) made in silicon. Please refer to the application note Fundamentals of Gallium Nitride Power Transistorsfor a general discussion of the devices and technology.

The following videos also cover the basics of GaN:
How To GaN 01: Introduction – Material Compositions
How to GaN 02: Introduction – Performance Characteristics

Scanning electron micrograph cross section of an eGaN FET
EPC's GaN Power Transistor Structure

Scanning electron micrograph cross section of an eGaN FET

First launched in 2010, eGaN FETs are already in their fifth generation and we are just getting started with this remarkable new technology. EPC is working to make eGaN FETs higher performance, easier to use, and lower cost than the aging power MOSFET. To stay informed of the latest developments, join our mailing list and follow us on social media.

EPC offers several tools to help simplify the evaluation process of EPC’s eGaN FETs and ICs We have development boards available which include all the critical components on a single board that can be easily connected into any existing system. The boards contain all the critical components and layout for optimal switching performance, including a gate drive circuit, an on-board gate drive supply, and bypass capacitors.

The list of available development boards and supporting documentation is growing and can be found on the Demo Boards product page.

EPC also provides P-SPICE, T-SPICE, LT-SPICE, and Spectre models for all devices on the Design Support page. Our experience has shown that the device models portray an extremely accurate representation of actual device performance. The results of our testing can be found in application note Circuit Simulation Using EPC Device Models.

For the engineer able to deploy the time and resources necessary to assemble EPC’s transistors directly onto a PCB, read our application note Assembling eGaN FETs and ICs.

Quick references to Die Attach and Detach are also available, along with video demonstrations on the Assembly Resources page.

氮化鎵技術不僅僅提高性能及降低成本,它的固有優勢 -- 可以集成多個元件於相同的基板上,可影響整個功率轉換市場。與通用矽基積體電路技術相比,氮化鎵技術讓設計師可以簡單直接、低成本地在單個晶片上實現單片式功率系統。

半橋元件是目前最普遍使用的構建模組。EPC公司在2014年推出集成式半橋元件系列,開展系統單晶片的發展旅程。配備集成式同步自舉電路的集成半橋元件EPC2107EPC2108的推出,進一步擴大SoC的發展趨勢。在2018年,我們繼續推出全新的eGaN積體電路,在單個晶片結合高頻GaN FET及閘極驅動器,從而實現更高的效率、更小的尺寸及更低的成本。這些元件可以在我們的產品選擇指南找到。

The voltage range of EPC’s current product offering is 15V – 200V. EPC plans to expand our product line to include higher voltage products. At that point, EPC eGaN®FETs will cover 90% of the applications currently served by the existing power MOSFET market. For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

We believe the technology is very capable of much higher blocking voltages; due to the nature of its high electron mobility, eGaN devices can be designed for high voltages with much less impact on RDS(ON) than silicon. Additionally, as a small device, the capacitances are much lower than those of trench MOSFETs per area allowing very high switching speeds. The result is a device that can provide the high blocking voltage requirement with little penalty on RDS(ON) and speed. We do not currently have products beyond 600V on our roadmap. For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

Enhancement mode and depletion mode n-channel GaN devices are available on the market today. EPC supplies only enhancement mode n-channel devices at the present time. Whereas it is possible to make a p-channel device, the performance is quite poor compared with silicon. For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

EPC is developing IC technology based on our eGaN technologyplatform. The integration of signal level components with power GaN transistors could enable one of the most significant changes in semiconductor history! For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.

EPC’s quality management system is ISO 9001:2015 qualified. EPC partners with world-class ISO/TS 16949 and ISO 9001 certified wafer fabrication and assembly suppliers and EPC contracts with Digi-Key Corporation, an ISO 9001 certified organization, for the global distribution of our products. Please visit the Quality and Environmental page for more information on EPC’s Quality and Environmental programs.

We do not currently have plans to release discrete GaN diodes. It should be noted that the current eGaN FETs can be made to act as a diode; there is no physical diode that bypasses the switch in the reverse direction, however, when current is forced from source to drain, the drain voltage falls to the point where it begins to turn the channel on, acting just like a diode. As no minority carriers are present, these devices have no reverse recovery.

For the latest on new product development sign up to receive news and product updates from EPC or by texting "EPC" to 22828.