EPC技術文章

Experts Weigh in on GaN & SiC at APEC 2024

In this video from Power Electronics News, a lineup of distinguished speakers from semiconductor companies shares insights into groundbreaking developments in gallium nitride– and silicon carbide–based power devices.

The GaN speakers address two critical questions shaping the future of wide bandgap:

  1. The significance of substrate material choice for GaN-based power devices. They elaborate on how this choice impacts device performance, reliability and manufacturability and discuss how researchers are tackling substrate-related challenges.
  2. Specific market segments where GaN devices are outperforming traditional silicon-based solutions, driving adoption and revealing the technology direction of their respective companies. The speakers include:
    • Robert Taylor, applications engineer/general manager industrial applications at Texas Instruments
    • Michael de Rooij, VP of applications engineering at EPC
    • Balu Balakrishnan, CEO of Power Integrations

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Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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PODCAST: GaN for Motor Control and LiDAR Applications

In this episode of PowerUP featuring Alex Lidow, CEO of EPC, we delve into an examination of the revolutionary implications of GaN technology across a range of applications, with a specific focus on motor control and LiDAR systems.

Power Electronics News
February, 2024
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Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
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採用晶片級封裝的氮化鎵元件熱建模

與採用傳統矽元件的轉換器相比,採用氮化鎵基高電子遷移率電晶體 (HEMT) 具有許多材料和性能優勢,已廣泛用於消費和工業用功率轉換領域。氮化鎵元件在更高的開關頻率下提高了功率轉換效率,進而實現更低的系統成本和更高的功率密度。隨著功率密度的增加,散熱分析和熱建模變得至關重要。我們將在本文分享EPC的熱量計算器。 EPC公司製造增强型 GaN HEMT 和集成電路,例如支持多種轉換器的半橋元件。

Power Electronics News
2023年11月
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GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions

Space exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior radiation tolerance and unmatched electrical performance compared to traditional silicon MOSFETs. In this article, we delve into the reasons why GaN power devices are the ultimate choice for power conversion applications in space and how their resistance to radiation makes them an extremely robust solution for space missions.

Components in Electronics
October 2023
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Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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GaN in Space: Unlocking Efficiency and Performance in Satellite Systems

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

EE Times Europe
October 2023
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氮化鎵技術在功率轉換領域普及進程的里程碑

影響氮化鎵技術在各種電源管理應用中的快速滲透普及有哪些因素?在本文中,我們將深入探討在過去 13 年中我司訪問過、已投入批量生産的客戶的反饋。

Power Electronics News
2023 年 10 月
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氮化鎵電晶體簡化大電流馬達控制逆變器的設計

由電池供電的工業車輛,例如叉車、手動搬運車或倉庫內的自動車輛,需要大電流逆變器來驅動馬達。 氮化鎵技術有助於提高這些應用中的功效和簡化逆變器的設計。

Bodo System
2023 年 10 月
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GaN產業版塊動盪宜普如何越級挑戰?

宜普電源轉換公司聯合創辦人暨執行長Alex Lidow表示,GaN的成本競爭力亦與Si MOSFET並駕齊驅,潛在爆發力更有過之而無不及,目前最關鍵就是得重塑諸多研究者的老舊觀念,認為GaN昂貴到碰不得。GaN的技術正迎來轉捩點,在先進運算、車用電子、太空電子及消費電子等新型應用設計多數採GaN技術,而非Si MOSFET。

DIGITIMES Asia
2023年9月
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宜普拚GaN成本優勢目標超車Si MOSFET

宜普電源轉換公司聯合創辦人暨執行長Alex Lidow接受DIGITIMES專訪,提到GaN主要會被應用在650V及以下市場。反之碳化矽則是主導650V以上的市場,它可望取代矽基絕緣閘極雙極性電晶體。宜普也在開發對速度及尺寸特性極為要求的400V以下市場。且致力於製造比Si功率元件擁有更高性能、更具成本競爭力的GaN元件。

DIGITIMES Asia
2023年9月
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EPC Space Brings GaN to the Edge of the Atmosphere

Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
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采用通过单片GaN集成电路提高性能,同时、缩小降低尺寸和降低成本

在功率转换、电机驱动和激光雷达等应用中,15 V至350 V范围内的氮化镓(GaN)异质结场效应功率晶体管显示出比硅具有显著优势的,无论是在效率、尺寸、速度和成本方面。这些优势源于关键电场的数量级比硅高出一个数量级,具体而言,尤其是高三倍的带隙方面有3倍的优势,和高1.3倍的电子迁移率方面有1.3倍的优势。

Bodo’s Power Systems 2023年9月
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GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications

As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
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EPC Aims High with 300V space-grade GaN power transistor

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

Electronics Weekly
August, 2023
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GaN Technology Revolutionizing Space Missions: Enhancing Efficiency, Reliability, and Sustainability

GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.

Power Electronics News
August, 2023
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Predicting GaN Device Lifetimes In Solar Microinverters And Power Optimizers

Microinverters and power optimizers are widely utilized in modern solar panels to maximize energy efficiency and conversion. Such topologies and implementations usually require a minimum of 25 years of lifetime, which is becoming a critical challenge for market adoption. Low-voltage gallium nitride (GaN) power devices (VDS rating < 200 V) are a promising solution and are being used extensively by an increasing number of solar manufacturers.

In this article, a test-to-fail approach is adopted and applied to investigate the intrinsic underlying wear-out mechanisms of GaN transistors. The study enables the development of physics-based lifetime models that can accurately project the lifetimes under the unique demands of various mission profiles in solar applications.

How2Power
August, 2023
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A high efficiency, 3 kW capable, 2-phase, 3-level Converter using paralleled eGaN FETs

As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low RDS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
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汽車電子用於低壓配電的演變—從 ICE 、MHEV 到目前的BEV汽車應用

汽車電子在過去30年内經歷了幾個時代的演變。 從主要採用機械或發動機驅動系統的純內燃機 (ICE),到添加電力動力的輕度混合動力 (MHEV),再到全電池電動汽車 (BEV)應用。 在這三個時代中,用於轉換和分配電力的架構甚至基本半導體元件都發生了重大的變化。 本文討論了這個進化過程和對將來進化的方向做出了一些推測。

Power Systems Design
2023年8月
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