eGaN^®場效應電晶體及集成電路

eGaN場效應電晶體及集成電路

評估板套件/演示電路板

評估板套件/演示電路板

甚麼是氮化鎵（GaN）？

甚麼是氮化鎵（GaN）？

為何選擇氮化鎵（GaN）？

為何選擇氮化鎵（GaN）？

氮化鎵（GaN）何去何從？

氮化鎵（GaN）何去何從？

向GaN技術專家提問

向GaN技術專家提問

氮化鎵元件的可靠性

氮化鎵元件的可靠性

裝配資源

裝配資源

EPC書刊

EPC書刊

雜談GaN技術部落格的最新消息

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Use the Superior Power Density of Gallium Nitride FETs to Design a USB PD3.1 Power Supply with a 240 W, Universal AC Input

Making a Fast, Efficient, Small 350 V Half Bridge Module with eGaN FETs

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GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size

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